updated April 2010

Name:

 

Vahe Buniatyan

Title:

Doctor of Tech. Sci., Professor

Telephone/Fax:

+374 10 524935

E-mail:

vbuniat@seua.am

 

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Graduated:

Technical Kybernetics Department of Yerevan Politechnical Institute, 1970

Semiconductors and Dielectrics Devices

Post Graduate:

Computer System Technology and CAD Chair of YPI, 1978

Candidate:

Vilnius State University, Lithuania, 1981, Physics of Semiconductors and Dielectrics

Doctoral:

State Engineering University of Armenia, 1998, Solid-State Electronics and Microelectronics

Investigations of high frequency characteristics of injection transit-time diodes with traps and quantum-wells

Main Research Interests:

Physics of Semiconductors and Semiconductor Devices; Si and SiC based Microwave and Infrared Devices; Optically controlled Superconducting thin films, Ferroelectric based chemical and biomedical sensors.

Current research interests:

• Physics of semiconductor and semiconductor devices;
• Microwave semiconductor devices;
• High-temperature superconductors (HTSC) and optically controlled HTSC based devices and schemes;
• Semiconductor & ferroelectric sensors;
• Bio- & chemical sensors.

Research Experience:

 

 

 

 

 

 

 

 

Teaching Experience, Expertise, Awards, Professional activities, Membership.

• ANSEF PS-32 Grant, 2003.
• INTAS-94-3912 and INTAS-96-268.
• ISTC A322 (2004-2006), ISTC A1232 (2006-2008).
• NATO-Grant Fellowship Heraklion, (Greece), Institute of Electronic Structure & Lasers”, MRG,    FORTH, November 2002 - January 2003. 
• Chalmers Technological University (Sweden) Research Grant, October-November 2006.
•  DAAD Research Grant,  Institute of  Nano- and Biotechnologies, Aachen University of Applied Sciences,  Institute of Bio- and Nanosystems, Research Centre Julich, Germany  June-September, 2008.

 

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Main Publications: (overall Published books and  manuals - 11, Published articles    - 117).

1. V.V.Buniatyan, V.M.Aroutiounian. Wide gap semiconductor microwave devices. J. Phys. D: Appl. Phys. 40, pp.6355-6385,2007.

 

2. В.В.Буниатян, В.М. Арутюнян, А. А. Тамразян. Новая модель порогового напряжения короткоканального SiC MOП транзистора с глубокими примесями и уровнями захвата. Сб. Трудов Межд. Конфер. МЭС-08, Москва, с.225-230, 2008.

3. Buniatyan V.V., Aroutiounian V M , G.M. Travajyan. MOS synthetic inductance for RF integrated applications Proceed. of 17 th Inter. Scientific & Applied Science Conf. Electronics ET 2008, Septem. 24-26, Sofia, Book.3, pp.15-21, 2008

Recent Publications:

1.  Buniatyan V.V., Aroutiounian V. M, Hakobyan A.H. Characteristics of optically controlled filters on the base of HTSC. Proceed. of SENSOR+TEST Int. Conf., OPTO-, IRS2 - 2008, 6-8 May, Nurenberg, pp.303-308, 2008.

2. Buniatyan V.V., N.W. Martirosyan, M.G. Travadjyan, Kh.Zh.Harutyunyan G.R. Sukiasyan. Characteristics of SiC/Ge Humidity Sesors. SENSOR Conference 2007, Proceedings 1, Nurnberg, Germany, 22-24 May 2007.

3.  Buniatyan V.V., M. H. Abouzar, N. W. Martirosyan, J. Schubert,S.Gevorgian, M. Schoening, and A. Poghossian. pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique. Phys. Status Solidi A 207, No. 4, 824-830 (2010).