updated April 2010

Name:

Ferdinand Gasparyan

Title:

Doctor of Phys.Math.Sciences,

Professor

Telephone/Fax:

+374 10 390333 (Residence)

+374 10 578382 (Office)

+374 95 576061 (Cell)

+374 10 555590 (Fax)

E-mail:

fgaspar@ysu.am

Graduated:

 

Faculty of Technical Cybernetics of Yerevan Polytechnic Institute

Semiconductor Devices, 1972.

Post Graduate:

Institute for Radiophysics and Electronics of Nat. Acad. of Sci. of Armenia, 1977

Physics of Semiconductors and Dielectrics

Candidate:

 

 

 

Institute of Physics Academy of Sci. of Azerbaijan, 1981 

Physics of Semiconductors and Dielectrics

Photoelectrical amplification, static, small-signal and noises characteristics of structures made on double injection compensated semiconductors

Doctoral:

Institute For Physics Applied Problems Academy of Sci. of Armenia, Solid state physics, 1995

Physical phenomena in the double injection structures made on compensated semiconductors

Main Research Interests:

 

 

Double injection current theory; Infrared and ultraviolet photodetectors, radiometers; Theory of internal noises (thermal, diffusion and generation-recombination) of the double injection structures, infrared photo-detectors and radiometers; Theory of thermal chaos and low-frequency 1/f fluctuations in homogeneous and non-homogeneous semiconductors; Theory of electron-phonon interactions in semiconductors; Solar cells.

Subsidiary Research Interests:

Semiconductor thermo elements and anemometers; Liquid flow meters; Electron beam sensors

Research Experience:

Governmental Grants of Ministry of Science and Education of Armenia;

ISTC Grants A-322 & A-1232; ANSEF Grant PS-53; CRDF Grant ARP2-2678-YE-05

 

PUBLICATIONS: Author of 5 books, 1 Preprint and 1 Chapter in the book, 1 USSR Patent, and more than 120 papers and reports in Conferences (List is attached).


Books

  1. Arutyunyan V.M., Gasparyan F.V. Problems of the modern microelectronics: Charge Coupled Devices. PH NAS Republic of Armenia, Yerevan, 1986. 160 pages. (In Armenian)
  2. Gasparyan F.V., Arutyunyan V.M., Adamyan Z.N. Photodetectors: Past, Present, Future. PH “Hayastan”, Yerevan, 1986. 231 pages. (In Armenian)
  3. Gasparyan F.V., Adamyan Z.N., Aroutyunyan V.M. Silicon Photodetectors. PH Yerevan State University, 1989. 362 pages. (In Russian)
  4. Abrahamian Ju.A., Gasparyan F.V., Martirossian R.M. Threshold cha­racteristics of the photode­tectors, IR radiometers and main materials for modern photoelectronics. PH Yerevan State University, Yerevan, 2000, 153 pages. (In Russian)
  5. Abrahamian Yu., Martirissyan R., Gasparyan F., Kocharyan K., Methods and Materials for Remote Sensing. Infrared Photo-Detectors, Radiometers and Arrays, 2004, Kluwer Academic Publishers. Boston/Dordrecht/New York/London, 2004, 160 pages.
  6. Gasparyan F. Semiconductor Physics & Principles of Solid State Electronics. PH YSU, Yerevan 2011, 387 pages. (In Armenian)

Preprint and Chapter

  1. Arutyunyan V.M., Buniatyan V.V., Varosyan A.G., Gasparyan F.V. Influence of deep impurity levels on the electrophysical parameters of the Gunn dio­des, injection-lighting diodes and IR S-photodetectors. Preprint of IR&E NAS Republic of Armenia, Yerevan, 1975, #2, 95 pages. (In Russian)
  2. Gasparyan F. Chapter 8: Influence of Built-In Fields on the Efficiency of Mono­crystalline Solar Cells, In: Recent Developments in Solar Energy. 2005, Nova Publishers, Ed. Tom P. Hough, pp.249-288.

Patents

  1. Avakyan K.V., Gasparyan F.V., Aroutyunyan V.M., Marukyan V.Sh. Sample stage for electron microscope. Certificate of Authorship #1636895. Dec. 22, 1990, pp. 1-6.
  2. Gasparyan F.V., Asriyan H.V., Melkonyan S.V., Korman C.E. "Method of 1/f noise reduction and Noise Level Manipulation in semiconductor based devices" May 7, 2010 as U.S. Patent Application for Letters Patent of the United States No. 61/332,408.

Papers

  1. Gasparyan F.V., Vitusevich S.A., Offenhäusser A., Schöning M.J. Modified Charge Fluctuation Noise Model for Electrolyte-Insulator-Semiconductor Devices, Mod. Phys. Lett. B (MPLB), 2011, Vol. 25.
  2. Gasparyan F.V., Poghossian A., Vitusevich S.A., Petrychuk M.V., Sydoruk V.A., Siqueira J.R. Jr., Oliveira O.N., Offenhäusser A., Schöning M.J. Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers. IEEE Sensors Journal, 2011, v.11, #1, 142-149.
  3. Gasparyan F. Low-Frequency Noises in Nanotubes and Nanowires. Armenian Journal of Physics, 2010, vol. 3, # 4, pp. 312-341; http://ajp.asj-oa.am/306/
  4. Gasparyan F.V. Excess Noises in (Bio-)Chemical Nanoscale Sensors. Sensors & Transducers journal (ISSN 1726-5479), Vol.122, # 11, 2010, pp.72-84.
  5. Gasparyan F.V., Melkonyan S.V., and Asriyan H.V. Low frequency noises in semiconductors, MOS-like structures, gaz sensors and EIS based (bio-)chemical sensors. Proc. on 35 Anniversary of Foundation of Dept. of Radiophysics, Yerevan State University, Yerevan, 2010, pp.53-58.
  6. Gasparyan F.V. Modeling and Simulation of Light-Addressable potentiometric Sensors. J. of Contemporary Physics (Armenian Academy of Sciences), 2010, v.45, #5, 228-237.
  7. Gasparyan F.V., Poghossian A., Vitusevich S.A., Petrychuk M.V., Sydoruk V.A., Surmalyan A.V., Siqueira J.R. Jr., Osvaldo N. Oliveira Jr., Offenhäusser A., Schöning M.J. 1/f-noise in EIS bio-sensors functionalized with 3 layer-by-layer PAMAM/single walled carbon nanotubes. Proc. 20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.133-136.
  8. Mkhitaryan Z.H., Gasparyan F.V., Surmalyan A.V. Low frequency noises of hydrogen sensors on the base of silicon having nano-pores sensitive layer. 20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.137-140.
  9. Mkhitaryan Z., Gasparyan F., Surmalyan A. Low frequency noises of hydrogen sensors. Sensors & Transducers Journal, 2009, v. 104, #5, 58-67.
  10. Surmalyan A.V., Gasparyan F.V. Surface potential behavior in ISFET-based bio-(chemical) sensors with two insulator layers in dark and under intensity-modulated irradiation. Proc of 7th Int. Conf. on Semicond. Micro. & Nano-Electron., July 3-5, 2009, Tsakhcadzor, Armenia, pp. 67-70.
  11. Gasparyan F.V., Mkhitaryan Z.H., Surmalyan A.V. Basis structure of (bio-)chemical sensors: Comparative analysis of CVC and noises. Proc of 7th Int. Conf. on Semicond. Micro. & Nano-Electron., July 3-5, 2009, Tsakhcadzor, Armenia, pp. 101-104.
  12. Aroutiounian V.M., Mkhitaryan Z.H., Shatveryan A.A., Gasparyan F.V., Ghulinyan M.Zh., Pavesi L., Kish L.B., Granqvist C.-G. Noise spectroscopy of gas sensors. IEEE Sensors Journal, 2008, v. 8, #6, pp. 786-790.
  13. Mkhitaryan Z.H., Shatveryan A.A., Aroutiounian V.M., Gasparyan F.V. Noise in porous silicon structures in air and in gas adsorption conditions. J. of Contemporary Phys., 2008, v. 43, pp. 131-135.
  14. Gasparyan F.V. UV p-i-n photodiodes made on wide bandgap semiconductors. Modern Physics Letters B, 2008, v. 22, #5, pp. 369-381.
  15. Mkhitaryan Z.H., Shatveryan A.A., Gasparyan F.V. Noise properties of the struc­tures containing a layer of porous silicon, in air and in conditions of gas adsorption. Proc. of the 6th Int. Conf. on Semicond. Micro-& Nano-Elect­ronics, Tsakhcadzor, Sept. 18-20, 2007. Yerevan, 2007, pp.131-133; Armenian Journal of Physics, 2008, v.1, #1, pp. 104-107.
  16. Gasparyan F.V., Melkonyan S.V., Asriyan H.V., Korman C.E., Noaman B., Arakelyan A.H., Shatvetyan A.A., Avetisyan A.M.. Short outline of silicon MOS-like structures fabrication techniques, CVC and noise measurements. Proc. of the 6th Int. Conf. on Semicond. Micro-& Nano-Elect­ronics, Tsakhcadzor, Sept. 18-20, 2007. Yerevan, 2007, pp.153-156; Armenian Journal of Physics, 2008, v.1, # 1, pp. 118-122.
  17. Gasparyan F.V., Korman C.E., Melkonyan S.V. Noises of p-i-n UV photodetectors. SPIE 4th Int. Symp. Fluctuation and Noise, 20-24 May 2007, Florence, Italy, Proceedings of SPIE, 2007, v. 6600, pp. 66001L-(1 –9).
  18. Melkonyan S.V., Gasparyan F.V., Asriyan H.V. Main sources of electron mobility fluctuations in semiconductors. SPIE 4th Int. Symp. Fluctuation and Noise, 20-24 May 2007, Florence, Italy, Proceedings of SPIE, 2007, v. 6600, pp. 66001K-(1 –8).
  19. Gasparyan F.V. Influence of the thermal effect on the efficiency of a solar cell. Contemporary Physics, 2007, v.42, pp. 174-178.
  20. Gasparyan F. Influence of Built-In Fields on the Efficiency of Mono­crystalline Solar Cells. In: Recent Develop­ments in Solar Energy Research. Chapter 7, Ed. By Tom P. Hough, Nova Publishers, 2006, pp. 249-288.
  21. Melkonyan S.V., Aroutiounian V.M., Gasparyan F.V., Asriyan H.V. Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise. Physica, B: Physics of Condensed Matter, 2006, v.382, N1-2, pp. 65-70.
  22. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Semiconductor-metal interface as a 1/f noise level regulator. BPU-6 Conference Istanbul /Turkey, 22 - 26 August, 2006.
  23. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Semiconductor-contacting media heterointerface as a low-frequency noise level regulator. Int. Conf. New Tech­no­logies for develop­ment of Heterosemi­con­ductors for Device Applications, Sept.,21-23, 2006, Yerevan Armenia, pp. 56-57.
  24. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Influence of hydrogen on crystalline silicon surface conditions in view of 1/f noise reduction. Int. Sci. Journal for Alternative Energy and Ecology, #7, 2006, p. 21.
  25. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Interface impact on 1/f noise formation and hydrogen gas noise recognition. Int. Sci. Journal for Alternative Energy and Ecology, N6, 2006, p.28.
  26. Melkonyan S.V., Aroutiounian V.M., Gasparyan F.V., Korman C.E. Peculiarities of electron dist­ri­bution function's fluctuations damping in homoge­neous semiconductors. Physica B: Physics of Condensed Matter, 2005, v. 357, #3-4, pp. 398-407.
  27. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M., Asriyan H.V. 1/f - type Noise in View of Phonons Interface Percolation Dynamics. Proc. of the “18th Int. Conf. on Noise and Fluctuations (ICNF 2005)” September 19-23, 2005; Salamanca, Spain, v. 780, pp. 87-91.
  28. Asriyan H.V., Shatveryan A.A., Aroutiounian V.M., Gasparyan F.V., Melkonyan S.V., Mkhitharian Z.H., Ayvazyan G. Semiconductor-metal inter­face influence on the bulk low-frequency noise behavior and role of the phonons refraction points. Proc. of the “Noise and Information in Nanoelec­tronics, Sensors, and Standards part of SPIE’s 3rd Int. Symp. on Fluctuations and Noise”, 24-26 May 2005, Austin Texas USA, v. 5846, pp. 192-199.
  29. Gasparyan F.V., Aroutiounian V.M., Buniatyan V.V. Thermo-EMF of non-homogeneously doped p-n junction, Proc. of National Academy of Sciences of Armenia: Technical Sciences, 2005, v. LVIII, #2, pp. 307-317 (In Russian).
  30. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Space confined and bulk temporal fluctuations of phonons and linkage between two models of 1/f noise in semiconductors. Proc. of the 5th Int.Conf. on Semicond. Micro- and Nano-electronics, Aghveran, September 16-18, Armenia, Yerevan, 2005, pp. 24-27.
  31. Gasparyan F.V. UV photodiodes made on GaN, September 2005, Proc. of the 5th Int. Conf. on Semicond. Micro- and Nano-electronics, Aghveran, September 16-18, Armenia, Yerevan, pp. 227-230.
  32. Gasparyan F.V., Ayvazyan G.E. Built-in field’s effects on the collection coefficient and efficiency of solar cells on the base of p-n junction. Proc. of the 20th European PV Solar Energy Conference and Exhibition, Barcelona, 6-10 June 2005.
  33. Asriyan H.V., Shatveryan A.A., Aroutiounian V.M., Gasparyan F.V., Melkonyan, S.V. Mkhitharian Z.H., Ayvazyan G. Semiconductor-metal inter­face influence on the bulk low-frequency noise behavior and role of the phonons refraction points. Noise and Information in Nanoelec­tronics, Sensors, and Standards part of SPIE’s 3rd Int. Symp. On Fluctuations and Noise, 24-26 May 2005, Austin Texas USA, 2005, v.5846-25, pp. 192-199.
  34. Gasparyan F.V. Influence of the built-in fields on the efficiency of solar cells. Energy for Future. Proc. Of the Second Renewable Energy Conference. Yerevan, 2005, June 27-28, pp.115-118.
  35. Asriyan H.V., Gasparyan F.V. 1/f Noise component condi­tio­ned by built-in electric field in semiconductors. Modern Physics Letters B, 2004, v. 18, #10, pp. 427-442.
  36. Asriyan H.V, Gasparyan F.V., Aroutiounian V.M., Melkonyan S.V., Soukiassian P. Low-frequency noise in non-homogeneously doped semiconductor. Sensors and Actuators A, 2004, v.113, pp. 338-343.
  37. Gasparyan F.V., Aroutiounian V.M., Abrahamian Yu.A., Vahanyan A.I. Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te. Sensors and Actuators A, 2004, v. 113, pp. 370-375.
  38. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M., Korman C.E. Slow damping of electron distribution function fluctuations in equilibrium semiconductors. Proc of SPIE’s 2nd Int. Symp. on Fluctuations and Noise, 25-28 May, 2004, Gran Canarias, Spain, v.5472, pp. 391-400.
  39. Aroutiounian V., Gasparyan F., Buniatyan V., Travadjan M., Soukiassian P., Static and dynamic cha­rac­teristics of monopolar cur­rent injection in SiC with non-uniform distribution of traps, July 2002, Proceedings of the 2nd Int. Conf. “Mass and Charge Transport in In­organic Materials”, of the Forum on New Ma­terials, Part of CIMTEC 2002 10th Int. Ceramics Congress and 3rd Forum on New Ma­terials Florence, Italy, July 14-18, 2002. Faenza 2003. Advances in Science and Tech­no­logy, v. 37, pp. 89-96.
  40. Abrahamian Yu.A., Vahanyan A.I., Vagarshakian V.A., Gasparyan F.V., Karamyan G.G., Sarkisian A.G., Stafeev V.I. Some structures for cascade solar cells, Solar Energy Materials and Solar Cells, 2003, v. 80, #4, p. 451-457.
  41. Asriyan H.V, Gasparyan F.V., Melkonyan S.V. Influence of the non-quantum magnetic field on the behavior of 1/f noise in non-degenerate semiconductors, Proc. of National Academy of Sciences of Armenia: Physics, 2003, v. 38, #3, pp. 173-177. (In Russian).
  42. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M. On the theory of 1/f fluctu­a­tions of the lattice mobility of current carriers in homo­geneous semiconductors, J. of Contemporary Phys., 2003, v. 38, #1, pp. 29-35.
  43. Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Melkonyan S.V., Soukiassian P. Low-frequency Noise in Non-homogeneously doped Semiconductor. Proc. of EMRS-2003, Strasburg, France, June 10-13.
  44. Gasparyan F.V., Aroutiounian V.M., Abrahamian Yu.A., Vahanian A.I. Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te. Proc. of EMRS-2003, Strasburg, France, June 10-13.
  45. Asriyan H.V., Gasparyan F.V., Aroutiounian V.M. Built-in electric field as an additional source of 1/f noise in semiconductors. Proc. SPIE’s 1st Int. Symp on Fluctuation and Noise. 1-4 June 2003, Santa Fe, New Mexico USA, v. 5115, pp. 401-411.
  46. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M., Korman C.E. Current carrier mobility fluctuations in homogeneous semiconductors. Proc. SPIE’s 1st Int .Symp. on Fluctuation and Noise. 1-4 June 2003, Santa Fe, New Mexico USA, v. 5115, pp. 412-420.
  47. Melkonyan S.V., Gasparyan F.V., Asriyan H.V., Korman C.E. Fluctuation of mobility in semiconductors. Proc. of 4th Conf. on Second. Microelectro­nics, Tsakhcadzor, May 29-31, Yerevan 2003, pp. 7-10.
  48. Gasparyan F.V., Asriyan H.V., Melkonyan S.V., Korman C.E. Low-frequency noises in photoresistors. Proc. of 4th Conf. on Second. Microelectro­nics, Tsakhcadzor, May 29-31, Yerevan 2003, pp. 51-54.
  49. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M. On the theory of 1/f fluctuations of the lattice mobility of current carriers in homogeneous semiconductors. Proc. of Nat. Academy of sciences of Armenia: Physics, 2003, v. 38, #1, pp. 29-35. (In Russian)
  50. Asriyan H.V., Gasparyan F.V., Melkonyan S.V. Influence of the non-quan­tum magnetic field on the behavior of 1/f noise in non-degenerate semiconductors. Proc. of Nat. Academy of Sciences of Armenia. Physics, 2003, v.38, #3, pp. 173-177. (In Russian)
  51. Abrahamian Yu.A., Vahanyan A.I., Vagarshakian V.A., Gasparyan F.V., Karamyan G.G., Sarkisian A.G., Stafeev V.I. Some structures for cascade solar cells. Solar Energy Materials and Solar Cells, 2003, v.80, #4, pp. 451-457.
  52. Abrahamian Yu.A., Vahanyan A.I., Gasparyan F.V., Vagarshakian V.M., Karamian G.G., Martirosian S.G., Stafeev V.I. High-sensitive multielement line (matrixes) on the basis of field-effect transistors with easily reproduced production technology. Int. J. of Infrared & Millimeter Waves, 2002, v. 23, #12, pp. 1753-1764.
  53. Gasparyan F.V., Aroutiounian V.M., Soukiassian P. Solar cells on the base of non-uniform doped 6H-SiC p-n junction. Proc. Of World Rene­wable Energy Cong­ress VII, 29 June-5 July, 2002, Cologne, Germa­­ny (WREC 2002), pp. 56-61.
  54. Aroutiounian V.M., Melkonyan S.V., Gasparyan F.V., Diffusion damping of distribution function fluctuation, September 2001, Proc. of the 3rd Nat. Conf., Semicond. Microel., Sevan, September 10-12. Yerevan 2001, pp. 6-11 (In Russian).
  55. Gasparyan F.V., Asriyan H.V., 1/f fluctuations in semicon­duc­tors at the presence of elec­trical and magnetic fields, September 2001, Proc. of the 3rd Nat. Conf., Semicond. Microel., Sevan, September 10-12. Yerevan 2001, pp. 36-40 (In Russian).
  56. Gasparyan F.V., Low-frequency noise and Hooge formula, 2001, Proc. of National Academy of Sciences of Armenia: Physics, v. 36, #6, pp. 355-362 (In Russian).
  57. Gasparyan F.V., Aroutiounian V.M., Buniatyan V.V., Physical processes in solar cells with internal drawing field, 2001, Proc. of National Academy of Sciences of Armenia: Physics, v. 36, N4, pp. 210-218 (In Russian).
  58. Asriyan H.V., Aroutiounian V.M., Gasparyan F.V., Soukiassian P., Electrophysical and photo­electrical properties of UV-range injection structures made of silicon carbide, Applied Surface Science, 2001, v. 184 (1-4), pp. 460-465.
  59. Gasparyan F.V., Buniatyan V.V., Aroutiounian V.M., Soukiassian P., Sensitivity of p-n junction based on SiC, doped with deep impurity acceptor levels, Applied Surface Science, 2001, v. 184 (1-4), pp. 466-470.
  60. Abrahamian Ju.A., Kocharyan K.N., Martirossian S.G., Gasparyan F.V., Adamian Z.N., Aroutiounian V.M., Low-noisy high-sensitive infrared radiometer, Proc. of National Academy of Sciences of Armenia: Technical Sciences, 2001, v. 54, #1, pp. 141-147 (In Russian). 
  61. Aroutiounian V.M., Gasparyan F.V. On the theory of bifacial sunlit silicon solar cells. Solar and Switching Materials (Ed. By C.M. Lampert, C.-G. Gran­qwist and K.L. Le­wis), 1-2 August 2001, San Diego, USA, Proc. SPIE, 2001, v.4458, pp. 77-86.
  62. Gasparyan F.V., Melkonyan S.V., Aroutiounyan V.M., Asriyan H.V., 1/f Noises of homopolar and heteropolar semiconductors, 2000, Int. J. Mod. Phys. B (IJMPB), v. 14, #7, pp. 751-760.
  63. Abramian Yu.A., Adamyan Z.N., Aroutiounian V.M., Gasparyan F.V.  Martirossian S.G. Development of an infrared high-sensitive radiometer. Infrared Spaceborne Remote Sensing VII (Ed. By M.Strojnik and B.F.Andresen), 21-23 July 1999, Denver, Colorado, Proc. SPIE. 1999, v.3759, pp. 163-167.
  64. Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Noises of homo- and hetero-polar semiconductors connected with interactions of electrons conductivity and optical phonons. Proc. 2nd Nat.Conf. Semicond.Microel., May 21-24, Dilijan, 1999, pp. 28-36.
  65. Abramian Yu.A., Aroutiounian V.M., Vahanyan A.I., Gasparyan F.V., Baghiyan E.M. Semiconductor structures Pb1-xSnxTe­<Cd>  with high values of thermo-e.m.f. Proc. 2nd  Nat. Conf. Semicond.Microel., May 21-24, Dilijan, 1999, pp. 103-105.
  66. Gasparyan F.V. Bifacial irradiated silicon solar cells with p+nn+ structure. Proc. 2nd Nat.Conf. Semicond.Microel., May 21-24, Dilijan, 1999, pp. 139-146.
  67. Manoukyan A.G., Gasparyan F.V., Msryan G.K., Tovmasian K.A. Liquid flow meter. Proc. 2nd Nat. Conf. Semicond. Microel., May 21-24, Dilijan, 1999, pp. 229-232.
  68. Gasparyan F.V., Arutyunyan V.M. Photoelectrical properties of impurity photodiode made of Si<Zn>. Journal of Contem­po­rary Physics. 1998, v.33, #3, pp. 29-36.
  69. Melkonyan S.V., Gasparyan F.V., Aroutiounyan V.M., Asriyan H.V. Temperature chaos and the lattice character of the Hooge parameter in semi­conductors. Modern Phys. Letters B, 1998, v.12, #29 & 30, pp. 1245-1254.
  70. Abrahamyan Yu.A., Adamyan Z.N., Aroutiounian V.M., Gasparyan F.V., Marti­rossian S.G. An IR-radiometer with internal signal modulation. Int. J. of Infrared and Mil­limeter Waves. 1998, v.19, #6, pp. 827- 833.
  71. Gasparyan F.V., Melkonyan S.V. Theory of G-R noise in semiconductors at the super low frequencies. Proc. 1st Nat.Conf. “Semicond. Microel.”, May 22-23, Dilijan, 1997, pp. 46-50.
  72. Abrahamyan Yu.A., Gasparyan F.V., Papazyan K.Z., Serago.V.I., Saunin I.V., Stafeev V.I. Surface-sensitive photo resistors based on Pb1-xSnxTe<In>. Proc. 1st Nat. Conf. “Semicond. Microel.”, May 22-23, Dilijan, 1997, pp. 104-108.
  73. Asatryan R.S., Gasparyan F.V., Atutyunyan S.G., Karayan H.S., Msryan G.K., Hovhannisyan A.G. Some progress of optoelectronics in the medical industry. Proc. 1st Nat. Conf. “Semicond. Microel.”, May 22-23, Dilijan, 1997, pp. 117-120.
  74. Manoukyan A.G., Gasparyan F.V., Demirchyan E.A., Msryan G.K., Tovmasyan K.A.  Possibility using of the semiconductor diode as thermo anemometer. Proc. 1st Nat. Conf. “Semicond. Microel.”, May 22-23, Dilijan, 1997, pp. 176-179.
  75. Gasparyan F.V., Matevosyan K.B. Solar cells on the base of inhomogeneous doped semiconductor. Proc. NAS RA, 1996, v. 96, #2-4, pp. 55-60.
  76. Gasparyan F.V., Abrahamian Yu.A. Arutyunian V.M. Photoconductivity of n+nn+ struc­tures made of silicon compensated by zinc. J. Contemporary Phy­sics, 1996, v.31, #1, pp. 33-40.
  77. Gasparyan F.V., Melkonyan S.V. Electronic communication and flicker noise. Proc. 1st Int. Conf. On Application of Critical Technologies for the Needs of Society. Sept. 14-17, 1995 Yerevan, Armenia, p. 12.
  78. Gasparyan F.V. Signal amplification new mechanism in semiconduc­tors. Proc.1st Int. Conf. On Application of Critical Technologies for the Needs of Society. Sept. 14-17, 1995 Yerevan, Armenia, p. 13.
  79. Gasparyan F.V., Melkonyan S.V. Correctness of Langevin method in low-frequency region. J. of Contemporary Phy­sics. 1994, v.29, #5, pp. 171-177.
  80. Gasparyan F.V., Aghasaryan G.G. New mechanism of internal amplification in injection photodiodes made on comp­ensated semiconductors. Proc. NAS RA, 1993, v. 94, #1, pp. 29-36.
  81. Arutyunyan V.M., Adamyan Z.N., Gasparyan F.V., Melkonyan S.V. Noise in p+nn+ structures based on semiconductor com­pensated by double charged acceptors. Ra­diophysics and Quantum Electron., 1991, v.34, #11-12, pp. 946-952.
  82. Aroutyunyan V.M., Gasparyan F.V., Melkonyan S.V. Diagnostic of defects from the noise spectra. Solid State Pheno­mena. 1991, v.19&20, pp. 535-540.
  83. Aroutyunyan V.M., Gasparyan F.V., Melkonyan S.V. Diagnostic of defects from the noise spectra. Proc. Of the 4th Int. Autumn Meeting Held in Chossewitz, Germa­ny, Oct.13-19, 1991, pp. 18-21.
  84. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V. Theory of 1/f noise in the middle and far infrared photodetectors. Infrared Phys., 1989, v.29, #2-4, pp. 243-250.
  85. Gasparyan F.V. Ion implantation of semiconductors. Part 1. Science & Technique, 1988, #1, pp. 9-13.
  86. Gasparyan F.V. Ion implantation of semiconductors. Part 2. Science & Technique, 1988, #1, pp. 23-26.
  87. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V. On the theory of 1/f noise in the middle and far infrared photodetectors. Proc. 4th Int. Conf. On IR Phys., ETH, Zurich, Switzerland, Aug. 22-26.-1988, pp. 282-284.
  88. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V. Theory of low frequency noise in semiconductors. All Union 13th Conf. on Theory of Semiconductors. November 10-12, 1987, Yerevan, p. 25.
  89. Gasparyan F.V. Gradient amplification in IR detectors. Proc. All Union 13th Conf. on Theory of Semiconductors. November 10-12, 1987, Yerevan, p. 87.
  90. Arutyunyan V.M., Gasparyan F.V. Solar cells made on amorphous silicon. Science & Technique, 1987, #3, pp. 13-17.
  91. Gasparyan F.V., Melkonyan S.V. Noises of injection photo­dio­de based on semiconduc­tor compensated with single charged deep centers. Proc. Of Nonequilib­rium processes in semiconductors, #7, 1987, PH Yerevan St. Univ., pp. 23-36.
  92. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V.  Noises in double injection structures based on semicon­ductor compensated with single charged deep centers. Radio-techniques & Electronics, 1987, v.32, #2, pp. 416-426.
  93. Arutyunyan V.M., Adamyan Z.N., Barseghyan R.S., Gasparyan F.V., Azaryan M.H., Semerdjian B.O., Mkhitharyan Z.H., Melkonyan S.V. Phenomena in silicon photo­diodes doped with Zn and S. Infrared Phys., 1986, v.26, #5, pp. 267-272.
  94. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V.  Rejection of the “adiabatic approach” at the S-diodes’ noises calculation. Izv. AN ArmSSR, Physics, 1985, v.20, #4, pp. 211-216.
  95. Avakyan K.V., Adamyan Z.N., Gasparyan F.V., Arutyunyan V.M. Electron flow sensors based on p+nn+ structures made on silicon compensated by zinc. Electron Techniques, Series 2. Semicond. Devices, 1985, #3 (176), pp. 10-17.
  96. Gasparyan F.V., Avakyan K.V., Adamyan Z.N. Role of the gradient amplification in the sensitivity of electron beam sensors. Proc. Of Young Sci. Conf on the Problems of Modern Physics, Oct. 14-18, 1985, Dilijan, Armenia, pp.211-212.
  97. Gasparyan F.V., Melkonyan S.V. Generation-recombination noises in the double injection diodes. Proc. Of Young Sci. Conf on the Problems of Modern Physics, Oct. 14-18, 1985, Dilijan, Armenia, pp.213-214.
  98. Arutyunyan V.M., Gasparyan F.V. Information processing modern systems. Science & Techniques, Armenia, 1984, #9, pp. 20-23. (In Armenian)
  99. Arutyunyan V.M., Gasparyan F.V. Semiconductor photodetectors. Science & Techniques, Armenia, 1983, #11, pp. 10-14. (In Armenian)
  100. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V. On the noise theory of p+nn+ structures made on compen­sated semiconductors. Yerevan St. Univ. Sci. Proc., 1983, #2(153), pp. 56-61.
  101. Avakyan K.V., Adamyan Z.N., Harutunian V.M., Gasparyan F.V. Electron beam sensors made on silicon compensated by zinc.  Proc. Of Young Sci., Oct.4-7, Burakan, Armenia, 1983, pp.132-133.
  102. Arutyunyan V.M., Gasparyan F.V., Melkonyan S.V. Noises in injection photodetectors made on compensated by the deep centers semiconductors. Proc. of 2nd Conf. on Photoel. Phenomena in semiconductors, Sept.15-18, Odessa, 1982, Naukova Dumka, Kiev, pp. 25-26.
  103. Arutyunyan V.M., Adamyan Z.N., Azaryan M.H., Barseghyan R.S., Gasparyan F.V., Melkonyan S.V., Mkhitaryan Z.O., Saydashev I.I. Fluctuation phenomena in S-diodes based on compensated semiconductor. Proc. Of Conf. “Fluctuation phenomena in physical systems”, 28-29 Sept., 1982 Vilnius, Lithuania, pp. 194-196.
  104. Gasparyan F.V. Noises in the double injection structures made on com­pensated semiconductors. YSU Young Scientist. Natural Sci., 1982, #2(36), pp. 119-125.
  105. Gasparyan F.V., Melkonyan S.V. Influence of the deep recombination centers on the noise characteristics of S-diodes. Proc. Of Arm. Scientists, Yerevan, 1982, p.102.
  106. Adamyan Z.N., Arutyunyan V.M., Gasparyan F.V. Sensitivity of S-type photo­diodes in the presence of a concentration gradient of deep centers. Sov. Phys. Semicond., 1981, v.15, #10, pp. 1094-1096.
  107. Gasparyan F.V. Double injection in the structures made on GaAs<Fe>. YSU Young Scientist. Natural Sci., 1981, #2(34), pp. 79-89.
  108. Harutyunyan V.M., Gasparyan F.V. To the theory of small-sig­nal characteristics of the p+nn+ structures based on semiconductors compen­sa­ted by doubly ionized cen­ters. Electron Technology, 1980, v.13, #3, pp. 53-59.
  109. Adamian Z.N., Harutyunyan V.M., Gasparyan F.V. Double breakdown in injection photodetectors. Proc. of All Union 2nd Conf. on Deep centers in semiconductors, Oct.22-24, Tashkent, 1980, pp. 14-15.
  110. Harutyunyan V.M., Gasparyan F.V. Influence of deep centers’ concentration gradient on the peculiarities of S-photodetectors. Proc. of Conf. on Optical connection systems, May 15-18, 1980, Yerevan, pp. 35-36. 
  111. Harutyunyan V.M., Gasparyan F.V. Impedance of p+nn+ struc­tu­re made on semicon­ductor, compensated by deep doubly charged centers. Izv. AN ArmSSR, Physics, 1980, v.15, #4, pp. 274-279.
  112. Gasparyan F.V. On the theory of injection currents in semiconductor compensated by deep doubly ionized centers. YSU Young Scientist. Natural Sci., 1979, #2(30), pp. 70-80.
  113. Arutyunyan V.M., Gasparyan F.V. Impedance of p+nn+ struc­tu­re based on semicon­ductor, compensated by deep doubly ionized centers. Phys.Stat.Solidi a, 1978, v.49, #2, pp.797-801.
  114. Arutyunyan V.M., Gasparyan F.V. Low-signal characteristics of electron-hole plasma injected in the base region of “long” p+nn+ structures. Proc. of All Union 9th Conf. on Theory of semiconductors. Oct.24-26, Tbilisi, 1978, pp. 22-23.
  115. Arutyunyan V.M., Gasparyan F.V. Double injection theory in GaAs, compensated by iron. Proc. of 4th All Union Conf. on Investigation of GaAs. Sept. 19-20, 1978, Tomsk, p. 75.
  116. Arutyunyan V.M., Gasparyan F.V. Influence of irradiation on the S-diodes, made on semiconductor compensated with acceptors in upper half of the bandgap. Izv. AN ArmSSR, Physics, 1977, v.12, #2, pp. 123-128. (In Russian)
  117. Gasparyan F.V., Arutyunyan V.M. Influence of irradiation on the S-diodes, made on semiconductor compensated by the acceptors in the upper half of the forbidden gap. Proc. Of the Conf. Theoretical problems of the electron and electromechanical systems, June 3-4, 1976, Vladimir, pp.62-63. (In Russian)
  118. Arutyunyan V.M., Gasparyan F.V. Influence of irradiation on the S-diodes, made on silicon compensated by zinc. Izv.AN ArmSSR, Physics, 1976, v.11, #6, pp. 449-457. (In Russian)
  119. Arutyunyan V.M., Gasparyan F.V. On the theory of double injection in compensated semiconductor. Proc. Insulators and Semiconductors, Kiev, 1975, #8, pp. 65-72. (In Russian)