/1-3 July, 2011/ YEREVAN, ARMENIA, JULY 1-3, 2011, 8^rd International Conference (First call),

Download registration form and the call's info

IMPORTANT DATES

April 25, 2011 - Submission deadline for
4-page article
June 1, 2011 - Notification of acceptance

/1-3 December, 2010/ Celebration of 35 Anniversary of the Faculty of Radiophysics (educatory heading body of the Department). Celebrations were accompanied by a conference and Proc.'s publications: Proc. of the Sci. Conf. dedicated to the 35 Anniversary of YSU Radiophysics faculty, Yerevan, 1-3 December, 2010.

/22-23 April, 2010/ Commercial Promotional Presentation at Spain-ISTC/STCU cooperation conference Madrid, 22-23 April 2010, An Event under the Spanish Presidency of the EU, with support of the European Commission. Materials are available upon request: kisahar@ysu.am . 

/3-5 July, 2009/ Yerevan, SEMICONDUCTOR MICRO- AND NANOELECTRONICS,
7-th INTERNATIONAL CONFERENCE

Conference Program

/4-5 October 2008/ Two Special Reports and Boot Exibition on The Second Congress
"ARMTECH 2008" - October 4-5, 2008, www.armtechcongress.com, www.ada.am

Cursory overview leaflet of some R&D results (download)

/31 May 2007/ Award of President of Armenia

In 2007 the President of Republic of Armenia granted Presidential Award (129-A) to

V. Aroutiouanian, V. Arakelyan, Z. Adamyan, Kh. Martirosyan, G. Shahnazaryan

in the field of Technical Sciences and Information Technologies – 2006 for

“Studies on Solar Energy Conversion and Gas Sensors” research work.

/30 September 2007/ In September 2007 the Research Laboratory was transformed into
R&D Center of Semiconductor Devices & Nanotechnologies (CSD&N).

• Recent Papers: 2004-2006/2007, 2008, 2009 (go back)

Reviews and Books 2004-2006 (overall 14, review – 10, books - 4)

1. Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Investigations of the metal-oxide semiconductors promising for photoelectrochemical conversion of solar energy, Solar Energy Materials and Solar Cells, v. 89, 2005, p. 153-163.
2. Aroutiounian V.M., Hydrogen detectors, International Scientific Journal for Alternative Energy and Ecology (ISJAEE), N 3(23), 2005, p. 21-31.
3. Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Metal oxide photoelectrodes for hydrogen generation using solar radiation-driven water splitting, Solar Energy, v. 78, 2005, p. 581-592.
4. Abrahamian Yu., Martirissyan R., Gasparyan F., Methods and Materials for Remote Sensing. Infrared Photo-Detectors, Radiometers and Arrays, Kluwer Academic Publishers. Boston/Dordrecht/New York/London, 2004, 160 p.
5. Gasparyan F., Influence of built-in fields on the efficiency of mono­crystalline solar cells, In: Recent Developments in Solar Energy, Chapter 8, Ed. Tom P. Hough, Nova Publishers, 2005.

2004-2007 Publications in Scientific Journals (from 2001 to 2006 overall papers-185, of which international -110) (go back)

1. Aroutiounian V. M., Vahanyan A. I., Baghiyan E. M., Yepremyan A. O., Abrahamian Yu. A., Investigation of thermoelectric parameters of solid solutions and determination of their applications, Materials Science and Engineering B, v. 107, 2004, p. 78-83.
2. Gevorkyan V.A., Aroutiounian V.M., Gambaryan K.M., Kazaryan M.S., Touryan K.J., Wanlass M.W., Liquid- phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application, Thin Solid Films, v. 451–452, 2004, p. 124–127.
3. Aroutiounian V.M., Petrosyan S.G., Yesayan A.E., Multiple quantum well photodiode with lateral p-n junction, Thin Solid Films, v. 451-452, 2004, p. 389-392.
4. Petrosyan S.G., Yesayan A.E., Reuter D., Wieck A.D., The linearly graded two-dimensional p-n-junction, Appl. Phys. Lett., v. 84, ¹ 17, 2004, p. 3313-3316.
5. Gevogyan S., Shirinyan H., Manukyan A., Sharoyan E., Takeo M., Polyanskii A., Sarkisyan A., Matsushita T., Flat coil-based tunnel diode oscillator enebling to detect real shape of the superconductive transition curve and capable of imaging the properties of HTSC films with high spatial-resolution, Nuclear Instruments and Methods in Physics Research A, v. 520, 2004, p. 314-319.
6. Gasparyan F.V., Aroutiounian V.M., Abrahamian Yu.A.,Vahanian A.I., Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te, Sensors and Actuators A: Physical, v. 113, 2004, p. 370-375.
7. Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Melkonyan S.V., Soukiassian P., Low-frequency noise in non-homogeneously doped semiconductor, Sensors and Actuators A: Physical, v. 113, 2004, p. 338-343.
8. Asriyan H.V., Gasparyan F.V., 1/f Noise component conditioned by built-in electric field in semiconducturs, Modern Physics Letters B, v. 18, 2004, p. 427-442.
9. Aroutiounian V., Martirosyan Kh., Soukiassian P., Low reflectance of diamond-like carbon/porous silicon double layer antireflection coating for silicon solar cells, J. Physics D: Applied Physics, v. 37, 2004, p. L25-L28.
10. Petrosyan E.E., Decker F., Aroutiounian V.M., Investigations of lithium ion precipitation process into electrically nonactive states in the germanium high-compensated system doped with lithium, Proc. Engineering Academy of Armenia (PEAA), v. 1, 2004, p. 297-301.
11. Aroutiounian V.M., Brief information on the work of VIII World Renewable Energy Congress (Denver, USA), International Scientific Journal for Alternative Energy and Ecology (ISJAEE), N 9(17), 2004, p. 41-42.
12. Bellani V., Migliori A., Petrosyan S., Grigorian L., Petrosyan P., HRTEM, Raman and optical study of CdS1-xSex nanocrystals embedded in silicate glass, Phys. Stat Sol. (a), v. 201, 2004, p. 3023-3030.
13. Arakelyan A.O., Aroutionian V.M., Margaryan H.L., Meliksetyan V.A., Nersisyan S.R., Tabiryan N.V., Interface Effects on Semiconductor-Liquid Crystal Structure, Molecular Crystal and Liquid Crystal, v. 422, 2004, p. 227-236.
14. Buniatyan V.V., Aroutiounian V.M., Zekentes K., Camara N., Soukiassian P., Silicon carbide TUNNETT diodes, Solid-State Electronics, v. 48, 2004, p. 1569-1577.
15. Buniatyan V.V., Aroutiounyan V.M., Zekentes K., Camera N., Soukiassian P., Theoretical investigations of microwave characterictics of TUNNETT diodes made of silicon carbide, Material Science Forum, v. 457-460, 2004, p. 977-980.
16. Mkhitaryan Z.H., Shatveryan A.A., Adamian A.Z., Aroutiounian V.M., I-V characteristics of structures with porous silicon in electrolyte, Optical Materials, v. 27, 2005, p. 962-966.
17. Melkonyan S.V., Aroutiounian V.M., Gasparyan F.V., Korman C.E., Peculiarities of electron distribution function’s fluctuations damping in homogeneous semiconductors, Physica B, v. 357, 2005, p. 398-407.
18. Reuter D., Werner C., Petrosyan S., Wieck A.D., Depletion characteristics of two-dimensional lateral p-n-junctions, Appl. Phys. Lett, v. 86, 2005, p. 162110-1-162110-3.
19. Arakelyan A.H., Aroutiounian V.M., Margaryan H.L., Martirosyan G.L., High-performance solar vacuum collector, Intern. Scientific Journal for Alternative Energy and Ecology (ISJAEE), N 11(31), 2005, p. 75.
20. Aroutiounian V.M., Petrosyan S., Khachatryan A., Studies of the photocurrent in quantum dot solar cells by the application of a new theoretical model, Solar Energy Materials and Solar Cells, v. 89, 2005, p. 165-173.
21. Badalyan S.M., Kim C.S., Intra-Landau-level collective excitations in a bilayer disordered electronic system, Phys. Rev. B, v. 71, 2005, p. 153308-1-153308-4.
22. Semerjyan B.O., Adamian Z.N., Martirosyan Kh.S., Stability of the photoluminescence decay kinetics and performance of porous silicon based photoelectric structures, Intern. Scientific Journal for Alternative Energy and Ecology (ISJAEE), 12(32), 2005, p. 76-79.
23. M.H.Azaryan, The ponderomotive converter of displacements, Izv. NAN RA i GIUA, Ser.TN, LVIII, N2 (2005) 295-301.
24. M. H. Azaryan, V. M. Haroutyunyan, On the Simple Opportunity of Short-range Field Regime for Nano-investigations in Electronics. Proc..Nat.Acad.Sci. of Armenia. Physics v.106 , N4 , p. 319-326 (2005).
25. S. G. Gevorgyan , M. H.Azaryan, Given by flat-coil method opportunity to create nano-scale resolution probes for non-destructive study of objects in microelectronics, Proc. of the fourth international Conf, Agveran, Armenia, 16-18 September, pp. 184-187(2005).
26. M. H. Azaryan, V. M. Haroutyunyan, G.A. Mnatsakanyan, Ponderomotor sensor for registration of nanoscale forces and displacement, Proc..Nat.Acad.Sci. of Armenia. Physics v.40, N6, pp. 433-439(2005).
27. Kh. S. Martirosyan, V. M. Aroutiounian, P. Soukiassian. Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells. J. Phys. IV 132, pp. 325-328, 2006 (Proc. 10th Intern. Conf. On the Formation of Semiconductor Interfaces ICFSI-10, Aix-en-Provence, France, 3-8 July, 2005).
28. V. M. Aroutiounian, V. V. Buniatyan, P. G. Soukiassian, Vaz. V. Buniatyan. Characteristics of metal-silicon carbide tunnel contact. J. Phys. IV 132, pp. 137-139, 2006 (Proc. 10th Intern. Conf. On the Formation of Semiconductor Interfaces ICFSI-10, Aix-en-Provence, France, 3-8 July, 2005).
29. V. V. Buniatyan, V. M. Aroutiounian,  P. G. Soukiassian, K. Zekentes, Vaz. V. Buniatyan. Micriwave characteristics of hetero-junction impatt diodes based on SiC. J. Phys. IV 132, pp. 355-357, 2006 (Proc. 10th Intern. Conf. On the Formation of Semiconductor Interfaces ICFSI-10, Aix-en-Provence, France, 3-8 July, 2005).
30. V. V. Buniatyan, V. M. Aroutiounian, G. Sh. Shmavonyan, Vaz. V. Buniatyan. Temperature dependencies of frequency characteristics of HTSC RLC circuit. Applied Surface Science 252, pp. 5441-5444, 2006.
31. V. M. Aroutiounian, G. A. Avetisyan, V. V. Buniatyan, P. G. Soukiassian, Vaz. V. Buniatyan. A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps. Applied Surface Science 252, pp. 5445-5448, 2006.
32. S. V.  Melkonyan, V. M. Aroutiounian, F. V.  Gasparyan, H. V. Asriyan. Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise. Physica B 382, pp. 65-70, 2006.
33. V. M. Aroutiounian, Kh. Martirosyan, P. Soukiassian. Almost zero reflectance of a silicon oxynitride/porous silicon double layer antireflection coating for silicon photovoltaic cells. J. Phys. D: Appl. Phys. 39, pp. 1623-1625, 2006.
34. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian. Determination of basic parameters of porous silicon. J. Phys. D: Appl. Phys. 39, pp. 3543-3546, 2006.
35. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, E. A. Khachaturyan, J. A. Turner. Investigations of the structure of the iron oxide semiconductor-electrolyte interface. C. R. Chimie 9, pp. 325-331, 2006.
36. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, E. A. Khachaturyan, H. Wang, J. A.Turner. Photoelectrochemistry of semiconductor electrodes made of solid solutions in the system Fe2O3-Nb2O5. Solar Energy, v. 80, N 9, pp. 1098-1111, 2006.
37. М. Г. Азарян, В. М. Арутюнян. О возможности создания режима ближнего поля для наноисследований в электронике. Доклады НАН РА, т. 106, N 4, c. 319-326, 2006.
38. В. М. Арутюнян. Нетрадиционные источники энергии. «Айкакан Банак» («Армянская Армия»). Untraditional energy sources. “Haikakan banak” (Armenian Army).
39. А. Л. Маргарян, А. Л. Кесоян, В. М. Арутюнян. Автоматизированная система для исследования спектральных зависимостей оптических и фотоэлектрических характеристик полупроводников. Известия НАН РА, Физика, т. 41, N 4, c. 296-301, 2006.
40. Kh. S. Martirosyan, A.S. Hovhannisyan, V. M. Aroutiounian.   Porous silicon double-layer antireflection coating for silicon solar cells. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06),  Sitges-Barcelona, Spain, pp. 218-219, 2006.
41. V. M. Aroutiounian, Kh. S. Martirosyan, P. G. Soukiassian. On the possibility of application of diamond-like carbon/porous silicon double-layer antireflection coating in silicon solar cells. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06), Sitges-Barcelona, Spain, pp. 220-221, 2006.
42. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian. Determination of basic parameters of porous silicon. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06),  Sitges-Barcelona, Spain, pp. 240-241, 2006.
43. V. M. Arakelyan, Kh. S. Martirosyan, V. E. Galstyan, G. E. Shahnazaryan, V. M. Aroutiounian. Room temperature hydrogen sensor based on porous silicon/metal oxide structure. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06),  Sitges-Barcelona, Spain, pp. 242-243, 2006.
44. Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi. Low-frequency noise in structures with porous silicon in different gas media. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology, Sitges-Barcelona (PSST-06),  Spain, pp. 254-255, 2006.
45. V. Aroutiounian. Semiconductor metaloxide gas sensors. Abstracts of 2nd Intern. Workshop on Physics and Technology of Thin Films, Praha, Chech. Republic, p. 49, 2006.
46. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, H. R. Hovhannisyan, H. Wang, J. A. Turner. Photoelectrochemisrty of tin-doped iron oxide electrodes. Book of Abstracts 16th Intern. Conf. on Photochemical Conversion and Storage of Solar Energy (IPS-16), Uppsala, Sweden, W7-P-18, 2006.
47. Kh. S. Martirosyan, V. E. Galstyan, V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan. TiO2-x/porous silicon based hydrogen sensor. Abstracts of 11th Intern. Meeting  on Chemical Sensor (IMCS11), Brescia, Italy, p. 54, 2006 (Proc. on CD AP131M).
48. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Hydrogen and carbon monoxide gas sensing properties of sol-gel derived tin oxide thin films. Abstracts of 11th Intern. Meeting  on Chemical Sensor (IMCS11), Brescia, Italy, p. 134, 2006 (Proc. on CD AP132M).
49. V. M. Aroutiounian, Z. H. Mkhitaryan, A. A. Shatveryan, M. Ghulinyan, L. Pavesi, C. C. Granquist. Current-voltage and noise characteristics of porous silicon in carbon monooxide and air. Abstracts of the 11th Intern. Meeting on Chemical Sensors (IMCS11), Breshia, p.134, 2006. (Proc. on CD AP071M).
50. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, H. Wang. Semiconductor photoanodes in the system Fe2O3-Nb2O5 for photoelectrochemical water splitting. Technical Abstract Summaries of SPIE, Optics and Photonics, San Diego, California, USA, p. 435, 2006.
51. Kh. S. Martirosyan, V. M. Aroutiounian, A. S. Hovhannisyan, P. G. Soukiassian. Double and triple layer antireflection coating for silicon solar cells based on porous silicon. Technical Abstract Summaries of SPIE, Optics and Photonics, San Diego, California, USA, p. 344, 2006.
52. V. M. Aroutiounian, Kh. S. Martirosyan, A. S. Hovhannisyan, P. G. Soukiassian. Double- and triple-layer antireflection coatings for silicon solar cells based on porous silicon. Proc. of SPIE (Nanoengineering: Fabrication, Properties, Optics, and Devices III, San Diego, California, USA, 15-17 August 2006), v. 6327, pp. 63270T-1-63270T-10, 2006.
53. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, H. Wang, J. A. Turner. Semiconductor photoanodes in the system Fe2O3-Nb2O5 for photoelectrochemical water splitting. Proc. of SPIE (Solar Hydrogen and Nanotechnology, San Diego, California, USA, 14-17 August 2006), v. 6340, pp. 63400M-1-63400M-12, 2006.
54. V. M. Aroutiounian, V. M. Arakelyan, V. E. Galstyan, Kh. S. Martirosyan. Porous silicon-TiO2-x based room temperature hydrogen sensor. Proc. Eurosensors 2006, Göteborg, Sweden, v. 1, pp. 308-309 (T2A-O4), 2006.
55. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Low temperature and highly sensitive thin-film hydrogen sensor. Proc. Eurosensors 2006, Göteborg, Sweden, v. 2, pp. 98-99 (T2A-P10), 2006.
56. Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi, C-G. Granqvist. Noise spectroscopy of structures with porous silicon layers exposed to different gases. Proc. XX Eurosensors 2006, Göteborg, Sweden, v. 2, pp. 304-305 (W1A-P4), 2006.
57. В. М. Аракелян, В. М. Арутюнян, Г. Э. Шахназарян, Г. М. Степанян, А. Р. Оганесян. Фотоэлектрохимическое получение водорода с использованием металлоксидных полупроводниковых фотоэлектродов.Альтернативная энергетика и экология (АЭЭ), N 5(37), с. 111, 2006 (Тезисы докладов Первого Всемирного конгресса «Альтернативная энергия и экология», WCAEE-2006, Россия, Волга, 21-25 августа, 2006). V. M. Arakelyan, V. M. Aroutiounian, G. E. Shahnazaryan, G. M. Stepanyan, H. R. Hovhannisyan. Photoelectrochemical production of hydrogen using metal oxide semiconductor photoelectrodes. Intern. Scientific Journal for Alternative Energy and Ecology, N 5(37), p. 111, 2006 (Abstracts Book First Intern. Congress for Alternative Energy and Ecology, WCAEE-2006).
58. А. З. Адамян, З. Н. Адамян, В. М. Арутюнян. Золь-гель технологии получения чувствительных к водороду тонких пленок. Альтернативная энергетика и экология (АЭЭ), N 6(38), с. 24-25, 2006 (Тезисы докладов Первого Всемирного конгресса «Альтернативная энергия и экология», WCAEE-2006, Россия, Волга, 21-25 августа, 2006). A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian. Sol-gel technologies for hydrogen sensitive thin film preparation, Intern. Scientific Journal for Alternative Energy and Ecology, N 6(38), p. 25, 2006 (Abstracts Book First Intern. Congress for Alternative Energy and Ecology, WCAEE-2006).
59. А. З. Адамян, З. Н. Адамян, В. М. Арутюнян, А. О. Аракелян. Низкотемпературный высокочувствительный тонкопленочный сенсор водорода. Альтернативная энергетика и экология (АЭЭ), N 6(38), с. 26-27, 2006 (Тезисы докладов Первого Всемирного конгресса «Альтернативная энергия и экология», WCAEE-2006, Россия, Волга, 21-25 августа, 2006). A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Low-temperature high sensitive thin-film hydrogen sensor. Intern. Scientific Journal for Alternative Energy and Ecology, N 6(38), p. 27, 2006 (Abstracts Book First Intern. Congress for Alternative Energy and Ecology, WCAEE-2006).
60. А. З. Адамян, З. Н. Адамян, В. М. Арутюнян. Золь-гель технологии получения чувствительных к водороду тонких пленок. Международный научный журнал «Альтернативная энергетика и экология» (АЭЭ), N 8(40), c. 50-55, 2006.
61. А. З. Адамян, З. Н. Адамян, В. М. Арутюнян, А. О. Аракелян. Низкотемпературный высокочувствительный тонкопленочный сенсор водорода. Международный научный журнал «Альтернативная энергетика и экология» (АЭЭ), N 9(41), c. 45-50, 2006.
62. V. M. Aroutiounian. Metal oxide hydrogen, oxygen and carbon monoxide sensors (review paper). Intern. Scientific Journal for Alternative Energy and Ecology, N11(43), pp.11-21, 2006.
63. В. М. Аракелян, В. М. Арутюнян, Г. Э. Шахназарян, Г. М. Степанян, А. Р. Оганесян. Фотоэлектрохимическое получение водорода с использованием металлоксидных полупроводниковых фотоэлектродов.Альтернативная энергетика и экология (АЭЭ), N 11(43), p. 78-84, 2006 .
64. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan, A. S. Stepanyan. Metal-oxide hydrogen sensor for fuel cell applications. Proc. 16th World Hydrogen Energy Conf. (WHEC 16), Lyon, France, on CD 183, pp. 1-5, 2006.
65. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, E. A. Khachaturyan, G. M. Stepanyan, V. E. Galstyan. Manufacture and investigation of titanium oxide photoanodes for water photoelectrolysis. Proc. 16th World Hydrogen Energy Conf. (WHEC 16), Lyon, France, on CD 147, pp. 1-6, 2006.
66. Gevorkyan V.A., Gambaryan K.M., Arakelyan A.H., Kazaryan M.S., Boeck T., Wilde P.-M., The epitaxial growth of low band-gap InAs based diode heterostructures for thermo-photovoltaic application, Intern. Scientific Journal for Alternative Energy and Ecology (ISJAEE), N 2(34), 2006, p. 47-50.
67. Margaryan H.L., Aroutiounian V.M., Influence of longitudinal electric field on time characteristics of Freedericksz transition, Molecular Crystals and Liquid Crystals, v. 454, 2006, p. 111/[513]-121/[523].
68. Vahanyan A.I., A method for the thermal conductivity measurement of semiconductors, Measurement, v. 39, 2006, p. 447-450. 
69. Azaryan M.H., Preliminary positioning driver for probe microscopes, Nanotechnics, N 4(8) 2006, p. 31-34.
70. Badalyan S.M., Kim C.S., Vignale G., Exchange and correlation effects on drag in low density bilayers: Coulomb and virtual-optical-phonon-mediated electron-electron interaction, Physica E 34, 2006, p. 421-424.
71. Gasparyan F.V., Melkonyan S.V., Asriyan H.V., Semiconductor-metal interface as a 1/f noise level regulator, BPU-6 Conf., AIP Conf. Proc., v. 899, 2006, p. 601.
72. Gasparyan F.V., Melkonyan S.V., Asriyan H.V., Influence of hydrogen on crystalline silicon surface conditions in view of 1/f noise reduction, Intern. Scientific Journal for Alternative Energy and Ecology, N 7, 2006, p. 21.
73. Gasparyan F.V., Melkonyan S.V., Asriyan H.V., Interface impact on 1/f noise formation and hydrogen gas noise recognition, Intern. Scientific Journal for Alternative Energy and Ecology, N 6, 2006, p. 28.
74. V. M. Aroutiounian. Hydrocarbon metaloxide sensors. Intern. Scientific Journal for Alternative Energy and Ecology, N 3(47), pp. 11-20, 2007.
75. V. M. Aroutiounian. Metal oxide hydrogen, oxygen and carbon monoxide sensors. Intern. Journal Hydrogen Energy, v. 32, pp. 1145-1148, 2007.
76. Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi, L. B. Kish, C. G. Granqvist.  Current-voltage and low-frequency noise characteristics of structures with porous silicon layers exposed to different gases. Physica E 38, pp. 160-163, 2007.
77. V. M. Arakelyan, V. E. Galstyan, Kh. S. Martirosyan, G. E. Shahnazaryan, V. M. Aroutiounian, P. G. Soukiassian. Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure. Physica E 38, pp. 219-221, 2007.
78. A. Z. Adamyan Z. N. Adamyan, V. M. Aroutiounian.Capacitance method for determination of basic parameters of porous silicon. Physica E: Low-Dimensional Systems & Nanostructures, v. 38, N 1-2, pp. 164–167, 2007
79. A. Adamyan, Z. Adamyan, V. Aroutiounian. Capacitance method for determination of basic parameters of porous silicon. Phys. Stat. Sol. (c) 4, N 6, pp. 1976-1980, 2007.
80. V. M. Aroutiounian, Kh. S. Martirosyan, P. G. Soukiassian. Reflectance spectrum of diamond-like carbon/porous silicon double-layer antireflection coatings designed for silicon solar cells. Phys. Stat. Sol. (c) 4, N 6, pp. 2107-2110, 2007.
81. Kh. S. Martirosyan, A.S. Hovhannisyan, V. M. Aroutiounian.   Calculation of reflectance of porous silicon double-layer antireflection coating for silicon solar cells. Phys. Stat. Sol. (c) 4, N 6, pp. 2103-2106, 2007.
82. Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi. Low-frequency noise in structures with porous silicon in different gas media. Phys. Stat. Sol. (c) 4, N 6, pp. 2063-2067, 2007.
83. V. M. Arakelyan, Kh. S. Martirosyan, V. E. Galstyan, G. E. Shahnazaryan, V. M. Aroutiounian. Room temperature gas sensor based on porous silicon/metal oxide structure. Phys. Stat. Sol. (c) 4 , N 6, pp. 2059-2062, 2007.
84. А. И. Ваганян, В. М. Арутюнян, Е. М. Багиян, А. О. Епремян, В. К. Абраамян. Термоэлектрические свойства твердого раствора Pb0.22Sn0.78Te<Ge>. Известия НАН Армении, Физика, т. 42, N 2, с. 96-102, 2007.
85. А. Л. Маргарян, В. М. Арутюнян, А. Л. Кесоян, Дж. Лопез. О возможности проведения дистанционного научного эксперимента в режиме реального времени с использованием сети Интернет. Доклады НАН РА, т. 107, N 2, c. 132-139, 2007.
86. V. A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan, A. H. Arakelyan, I. A. Andreev, L. V. Golubev, Yu. P. Yakovlev. Thermophotovoltaic converters on indium arsenide - based compounds.  Zhurnal Tekhnicheskoy Fiziki, v. 77, N 3, pp. 49-54, 2007.
87. З. О. Мхитарян, А. А. Шатверян, В. М. Арутюнян. Вольт-амперные характеристики структур со слоем пористого кремния при адсорбции моноокиси углерода. Известия НАН РА, Физика, т. 42, N 4, с. 236-241, 2007.
88. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, H. R. Hovhannisyan, H. Wang, J. A. Turner. Photoelectrochemistry of  tin-doped iron oxide electrodes. Solar Energy 81, pp. 1369-1376, 2007.
89. V. A. Gevorkyan, V. M. Aroutiounian,  K. M. Gambaryan, A. H. Arakelyan, I. A. Andreev, L. V. Golubev, Y. P. Yakovlev, M. W. Wanlass. The growth of low band-gap InAsSbP based diode heterostructures for thermo-photovoltaic application. Thermophotovoltaic Generation of Electricity. (Proc. Seventh Conf. Thermophotovoltaic Generation of Electricity TPV 7) AIP Conf. Proc., v. 890,  pp.165-173, 2007 (Eds. C. Algora and V. Corregidor).
90. V. Aroutiounian, V. Arakelyan, V. Galstyan, Kh. Martirosyan, P. Soukiassian. Room temperature hydrogen nanosensor made of porous silicon covered by TiO2-x thin film. Nanoelectronic Devices Defence Security (Nano-DDS) Conf., Arlington, Virginia, 18-21 June, p. 11, 2007.
91. V. Aroutiounian, Z. Mkhitaryan, A. Shatveryan, M. Ghulinyan, L. Pavesi, C. Granqvist, L. Kish. Niose spectrosciopy of gas sensors. Nanoelectronic Devices Defence Security (Nano-DDS) Conf., Arlington, Virginia, 18-21 June, p. 69, 2007.
92. V. Aroutiounian, A. Adamyan, Z. Adamyan, A. Arakelyan, K. Touryan, J. Turner. Tin dioxide thin-filn hydrogen nanosensor with low preheating temperature. Nanoelectronic Devices Defence Security (Nano-DDS) Conf., Arlington, Virginia, 18-21 June, p. 26, 2007.
93. V. Aroutiounian. Investigation of semiconductor materials and devices in Yerevan State University. Proc. of ArmTech Congress’07, San Francisco, 4-7 July, 2007.
94. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Double-layer semiconductor gas-sensor advanced technology. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 89-92, 2007.
95. A. S. Hovhannisyan, Kh. S. Martirosyan, V. M. Aroutiounian, P. G. Soukiassian. Double-layer diamond-like carbon antireflection coatings for GaAs solar cells. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 97-99, 2007.
96. Гаспарян Ф.В., Влияние теплового ‎эффекта на эффективность солнечного элемента, Известия НАН Армении, Физика, т 42. N3, 2007, ст.174-178.
97. Саакян М.С., Петросян С.Г., Фототок в двумерной n-p-n структуре, индуцированный фокусированным оптическим пучком, Известия НАН Армении, Физика, т. 42, N 34, 2007, ст. 168-173.
98. Badalyan S.M., Kim C.S., Vignale G., Senatore G., Exchange and correlation effects on the plasmon dispersions and the Coulomb drag in low-density electron bi-layers, Phys. Rev. B 75, 2007, p. 125321-1-125321-12.
99. Badalyan S.M., Kim C.S., Interplay between Coulomb and phonon-mediated drag in low-density bi-layers, in “Physics of Semiconductors”, 2007, p. 629-630.
100. Gevorkyan V.A., Aroutiounian V.M.,  Gambaryan K.M., Arakelyan A.H., Andreev I.A., Golubev L.V., Yakovlev Y.P., Wanlass M.W., The growth of low band-gap InAsSbP based diode heterostructures for thermo-photovoltaic application, Thermophotovoltaic Generation of Electricity, AIP Conf. Proc., v. 890,  2007, p. 165-173.
101. Gevorkyan V.A., Aroutiounian V.M., Gambaryan K.M., Andreev I.A., Golubev L.V., Yakovlev Yu.P., Indium arsenide based diode heterostructures for thermo-photovoltaic application. Proc. 8th Intern. Conf. on Mid-Infrared Optoelectronics (MIOMD-8): Materials and Devices, Bad Ischl, Austria, 2007, p. 158-159.
102. S. G. Gevorgyan, M. H. Azaryan, A mew principle of operation "magnetic-field" probe based on a single-layer flat coil method, Abstracts of the Applied Superconductivity Conference (ASC'06), Seattle, USA, Program # 2EF03 (2006).
103. M.H.Azaryan, Technique and device for micropositioning, Scientific Instrumentation and Measurement Technique, (2006).
104. M.H.Azaryan , Preliminary positioning driver for probe microscopes, "Nanotechnics",4(8) 2006,p.31-34, (2007).
105. М.Г.Азарян. Способ и устройство микропозиционирования, Изв. НАН РА и ГИУА сер.ТН, т.60,N3 (2007).

     Conference Proceedings 2004-2006 (from 2001 to 2006 overall - 110, of which international - 45)

     • Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Investigations of the metal oxide semiconductors promising for photoelectrochemical conversion of solar energy, Proc. EuroSun 2004 (14 Intern. Sonnenforum) Intern. Workshop – Photovotaics, H2 and Thermal Energy – New Developments in Russia and Other CIS Countries, Freiburg, Germany, 2004, p. 4-9.
     • Aroutiounian V., Petrosyan S., Khachatryan A., Photocurrent of quantum dot p-i-n solar cells, Proc. EuroSun 2004 (14 Intern. Sonnenforum) Intern. Workshop – Photovotaics, H2 and Thermal Energy – New Developments in Russia and Other CIS Countries, Freiburg, Germany, 2004, p. 59-64.
     • Aroutiounian V., Martirosyan Kh., Estimation of reflection spectra for different type antireflection coatings to silicon solar cells, Proc. EuroSun 2004 (14 Intern. Sonnenforum) Intern. Workshop – Photovotaics, H2 and Thermal Energy – New Developments in Russia and Other CIS Countries, Freiburg, Germany, 2004, p. 65-69.
     • Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Stepanyan G.M., Turner J.A., Investigation of ceramic ZnFe2O4 photoelectrodes, Proc. World Renewable Energy Congress VIII (WREC VIII), Denver, Colorado, USA, 2004, p. 1-5.
     • Buniatyan V.V., Aroutiounian V.M., Buniatyan Vaz.V., Optically controlled parametric effects in superconducting thin films, Proc. 24th Intern. Conf. on Microelectronics (MIEL 2004), NIŠ, Serbia and Montenegro, v. 1, 2004, p. 363-366.
     • Aroutiounian V.M., Buniatyan V.V., Buniatyan Vaz.V., Microwave parameters of HTSC thin film RC circuit, Proc. 24th Intern. Conf. on Microelectronics (MIEL 2004), NIŠ, Serbia and Montenegro, v. 1, 2004, p. 367-370.
     • Melkonyan S.V., Aroutiounyan V.M., Gasparyan F.V., Korman C.E., Slow damping of electron distribution function fluctuations in equilibrium semiconductors, Proc. SPIE, v. 5472, 2004, p. 389-400.
     • Melkonyan S.V., Bulk mechanism of mobility fluctuation depending on features of the semiconductor-environment interface, Proc. SPIE, v. 5472, 2004, p. 401-408.
     • Asriyan H.V., Shatveryan A.A., Aroutiounian V.M., Gasparyan F.V., Melkonyan S.V., Mkhitharyan Z.H., Ayvazyan G., Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points, Proc. of SPIE, Noise and Information in Nanoelectronics, Sensors, and Standards III, v. 5846-25, 2005, p. 192-199.
     • Gasparyan F.V., Ayvazyan G.E., Built-in field’s effects on the collection coefficient and efficiency of solar cells on the base of p-n junction, Proc. 20th European PV Solar Energy Conf. and Exhibition, Barcelona, 2005, p. 197-200.
     • Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M., Asriyan H.V., 1/f-type noise in view of phonons interface percolation dynamics, Noise and Fluctuations: 18th Intern. Conf. On Noise and Fluctuations – ICNF 2005, AIP Conf. Proc., v. 780, 2005, p. 87-91.
     • Arakelyan A.H., Aroutiounian V.M., Margaryan H.L., Martirosyan G.J., High-performance solar collector, Energy for Future, Proc. Second Renewable Energy Conf., Yerevan, 2005, p. 105-106.
     • Gasparyan F.V., Influence of the built-in fields on the efficiency of solar cells, Energy for Future, Proc. Second Renewable Energy Conf., Yerevan, 2005, p. 115-118.
     • Gevorkyan V.A., Gambaryan K.M., Arakelyan A.H., Kazaryan M.S., Boeck T., Wilde P.-M., The epitaxial growth of low band-gap InAs based diode heterostructures for thermo-photovoltaic application, Energy for Future, Proc. Second Renewable Energy Conference, Yerevan, 2005, p. 111-114.
     • Gusev A.L., Chaban P.A., Vorobieva M.V., Aroutiounian V.M., Veziroglu T.N., Hampton M.D., High sensitive hydrogen detectors for hydrogen energy, Energy for Future, Proc. Second Renewable Energy Conference, Yerevan, 2005, p. 125-126.
     • Semerjyan B.O., Adamian Z.N., Martirosyan Kh.S., Stability of the photoluminescence decay kinetics and performance of porous silicon based photoelectric structures, Energy for Future, Proc. Second Renewable Energy Conf., Yerevan, 2005, p. 122-124.
     • Adamyan A.Z., Hakhoyan A.P., Adamyan Z.N., Aroutiounian V.M., MgF2/porous silicon double-layer antireflection coating for silicon solar cells, Proc. Fifth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Agveran, Armenia, 2005, p. 223-226.
     • Arakelyan V.M., Shahnazaryan G.E., Khachaturyan E.A., n-TiO2 Photoanodes  made of anodic thin films and their current-voltage characteristics, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 211-214.
     • Aroutiounian V.M., Buniatyan V.V., Travadjyan M.G., Galstyan V.E., Martirosyan N.W., Hayrapetyan S.G., I-V characteristics of Si-Ge and SiC-Ge ceramic structures, Proc. Fifth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Agveran, Armenia, 2005, p. 12-15.
     • Badalyan S.M., Kim C.S., and Vignale G., Exchange and correlation effects in low density bilayers: Theoretical approach, Proc. Fifth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Agveran, Armenia, 2005, p. 111-114.
     • Badalyan S.M., Kim C.S., and Vignale G., Exchange and correlation effects in low density bilayers: Plasmon dispersions and Coulomb drag, Proc. Fifth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Agveran, Armenia, 2005, p. 115-118.
     • Gasparyan F.V., Melkonyan S.V., Asriyan H.V., Space confined and bulk temporal fluctuations of phonons and linkage between two models of 1/f noise in semiconductors, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 24-27.
     • Gasparyan F.V., UV photodiodes made on GaN, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 227-230.
     • Gevorgyan S.G., Azaryan M., Given by flat-coil method opportunity to create nano-scale resolution probes for nondestructive study of objects in microelectronics, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 82-86.
     • Gevorkyan V.A., Gambaryan K.M., Arakelyan A.H., Kazaryan M.S., Chilingaryan H.S., Boeck T., Wilde P.-M., Low band-gap InAsPSb/InAs diode heterostructures for thermo-photovoltaic application, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 206 – 209.
     • Mkhitaryan Z.H., Shatveryan A.A., Egiazaryan G.A., Asriyan H.V., Low-frequency noise in porous silicon, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 32-35.
     • Reuter D., Riedesel C., Werner C., Wieck A.D., Schuster D., Hansen W., Petrosyan S., Two-dimensional bipolar devices: fabrication and properties, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 127-130.
     • Sahakyan M., Petrosyan S., Reuter D., Laser beam-induced current in two dimensional n-p-n structures, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 220-222.
     • Semerjyan B.O., Photoelectric properties of silicon photodiode as a photosensitive capacitance,Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 254-257.
     • Shatveryan A.A., Mkhitharyan Z.H.,  Features of electrocarry in structures with porous silicon in electrolyte, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 74-77.
     • Vahanyan A.I., Baghiyan E.M., Yepremyan A.H., Investigation of thermoelectric properties of solid solution PbSe0.5Te0.5, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 62-65.
     • Zargaryan Ye.G., Vahanyan A.I., Sargissyan A.G., Mughnetsyan E.A., Ignatyan E.L., Effect of fluorination on the thermal coductivity of superconducting ceramics synthesized on the base of YBa2Cu3Oy, Proc. Fifth Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Agveran, Armenia, 2005, p. 78-81.
     • V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, H. R. Hovhannisyan, H. Wang, J. A. Turner. Photoelectrochemisrty of tin-doped iron oxide electrodes. Book of Abstracts 16th Intern. Conf. on Photochemical Conversion and Storage of Solar Energy (IPS-16), Uppsala, Sweden, W7-P-18, 2006.
     • Kh. S. Martirosyan, V. E. Galstyan, V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan. TiO2-x/porous silicon based hydrogen sensor. Abstracts of 11th Intern. Meeting  on Chemical Sensor (IMCS11), Brescia, Italy, p. 54; Proc. on CD AP131M, pp. 1-2, 2006.
     • V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, H. Wang. Semiconductor photoanodes in the system Fe2O3-Nb2O5 for photoelectrochemical water splitting. Technical Abstract Summaries of SPIE, Optics and Photonics, San Diego, California, USA, p. 435, 200
     • A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Hydrogen and carbon monoxide gas sensing properties of sol-gel derived tin oxide thin films. Abstracts of 11th Intern. Meeting  on Chemical Sensor (IMCS11), Brescia, Italy, p. 134-135; Proc. on CD AP132M, pp. 1-2, 2006.
     •  A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Low temperature and highly sensitive thin-film hydrogen sensor. Proc. of the XX Eurosensors, Göteborg, Sweden, pp. 98-99; Proc. on CD v. 2, T2A-P10, pp. 1-4, 2006.
     • A. Z. Adamyan, Z. N. Adamian, V. M. Aroutiounian. Determination of basic parameters of porous silicon. Mat. of the 5th Int. Conf. Porous Semiconductors – Science and Technology (PSST-06), Sitges – Barselona, pp. 240-241, 2006.
     • V. A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan, A. H. Arakelyan, I. A. Andreev, L.V. Golubev and Yu. P. Yakovlev. The growth of low band–gap InAsSbP based diode heterostructures for thermo–photovoltaic application. In: Thermophotovoltaic Generation of Electricity. Proc. of 7th World TPV Conference, El Escorial, Madrid, Spain, pp. TPV 4.4, 2006.
     • V. M. Aroutiounian, Kh. S. Martirosyan, P. G. Soukiassian. Possibility of application of diamond-like carbon/porous silicon double-layer antireflection coating in silicon solar cells. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06),  Sitges-Barcelona, Spain, pp. 222-223, 2006.
     • Kh. S. Martirosyan, A. S. Hovhannisyan, V. M. Aroutiounian. Calculation of reflectance of porous silicon double-layer antireflection coating for silicon solar cells. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06), Sitges-Barcelona, Spain, pp. 220-221, 2006.
     • Kh. S. Martirosyan, A.S. Hovhannisyan, V. M. Aroutiounian.   Porous silicon double-layer antireflection coating for silicon solar cells. Materials of the 5th Intern. Conf. Porous Semiconductors-Science and Technology (PSST-06),  Sitges-Barcelona, Spain, pp. 218-219, 2006.
     • Kh. S. Martirosyan, V. M. Aroutiounian, A. S. Hovhannisyan. Double and triple layer antireflection coating for silicon solar cells based on porous silicon. Technical Abstract Summaries of SPIE, Optics and Photonics, San Diego, California, USA, p. 344, 2006.
     • V. M. Aroutiounian, V. M. Arakelyan, V. E. Galstyan, Kh. S. Martirosyan. Porous silicon - TiO2-x based room temperature gas sensor. Proc. of the Eurosensors XX, Göteborg, Sweden, v. 1, pp. 308-309 (T2A-O4), 2006.
     • Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi. Low-frequency noise in structures with porous silicon in different gas media. Mat. of the 5th Int. Conf. Porous Semiconductors – Science and Technology (PSST-06), Sitges - Barselona, Spain, pp. 254-255, 2006.
     • V. M. Aroutiounian, Z. H. Mkhitaryan, A. A. Shatveryan, M. Ghulinyan, L. Pavesi, C. C. Granquist. Current-voltage and noise characteristics of porous silicon in carbon monooxide and air. Abstracts of the 11th Intern. Meeting on Chemical Sensors (IMCS11), Breshia, p.134; Proc. on CD AP071M, 2006.
     • Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, M. Ghulinyan, L. Pavesi, C. C. Granquist. Noise spectroscopy of structures with porous silicon layers exposed to different gases. Proc. of the Eurosensors XX, Göteborg, Sweden, v. 2, pp. 304-305 (W1A-P4), 2006.
     • F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan. Semiconductor-metal interface as a 1/f noise level regulator. BPU-6 Conference Istanbul /Turkey, 22 - 26 August, AIP Proc. 2006.

Recent Participation of the Department members to International Conferences (from 2001-2006 overall - 47 confs. of which international - 40)

• Gevorkyan V.A., Aroutiounian V.M., Gambaryan K.M., Liquid-phase epitaxial and electroepitaxial growth of InAsPSb/InAs diode heterostructures for mid-infrared application, Book of Abstracts, 6th Intern. Conf. on Mid-Infrared Optoelectronics and Devices (MIOMD-VI), St. Petersburg, Russia, 2004, p. 102-103.
• Aroutiounian V.M., Metal oxide photoelectrodes for hydrogen photoelectrochemical generation, Book of Abstracts, 15th Intern. Conf. on Photochemical Conversion and Storage of Solar Energy (IPS-15), Paris, France, 2004, W3-O-04.
• Shahnazaryan G.E., Aroutiounian V.M., Arakelyan V.M., Stepanyan G.M., Khachaturyan E.A., Turner J.A., Investigations of the structure of metal oxide semiconductor – electrolyte interface, Book of Abstracts, 15th Intern. Conf. on Photochemical Conversion and Storage of Solar Energy (IPS-15), Paris, France, 2004, W3-P-13.
• Arakelyan V.M., Aroutiounian V.M., Shahnazaryan G.E., Possibilities of the use of porous and nanocrystalline oxide photoelectrodes in photoelectrochemistry, Book of Abstracts, 15th Intern. Conf. on Photochemical Conversion and Storage of Solar Energy (IPS-15), Paris, France, 2004, W3-P-12.
• Adamyan A.Z., Adamyan Z.N., Aroutiounian V.M., Arakelyan A.H., Touryan K.J., Turner J.A., Semiconductor H2 leakage sensor, Energy for Future, The Second Renewable Energy Conf., Yerevan, Theses, 2005, p. 26.
• Arakelyan A.H., Aroutiounian V.M., Margaryan H.L., Martirosyan G.J., High-performance solar collector, Energy for Future, The Second Renewable Energy Conf., Yerevan, Theses, 2005, p. 32.
• Gasparyan F.V., Influence of the built-in fields on the efficiency of solar cells, Energy for Future, The Second Renewable Energy Conf., Yerevan, Theses, 2005, p. 36.
• Gevorkyan V.A., Gambaryan K., Arakelyan A.H., Kazaryan M.S., Boeck T., Wilde P.-M., The epitaxial growth of low band-gap InAs based diode heterostructures for thermo-photovoltaic application, Energy for Future, The Second Renewable Energy Conf., Yerevan, Theses, 2005, p. 38.
• Gusev A.L., Chaban P.A., Vorobieva M.V., Aroutiounian V.M., Veziroglu T.N., Hampton M.D., High sensitive hydrogen detectors for hydrogen energy, Energy for Future, The Second Renewable Energy Conf., Yerevan, Theses, 2005, p. 27.
• Semerjyan B.O., Adamian Z.N., Martirosyan Kh.S., Stability of the photoluminescence decay kinetics and performance of porous silicon based photoelectric structures, Energy for Future, The Second Renewable Energy Conference, Yerevan, Theses, 2005, p. 39.
• Margaryan H., Aroutiounian V., Influence of longitudinal electric field on times characteristics of Frederick’s transition, Book of Abstracts 11th Intern. Topical Meeting on Optics of Liquid Crystals, 2005, p. 41.
• Meliksetyan V.A., Arakelyan A.H., Aroutiounian V.M., Nersisyan S.R., The interface controlled effects in semiconductor-LC structures, Book of Abstracts 11th Intern. Topical Meeting on Optics of Liquid Crystals, 2005, p. 84.
• Badalyan S.M., Kim C.S., and Vignale G., Effect of exchange and correlation on Coulomb drag in low density bilayer two dimensional electron systems, 16th Intern. Conf. Electronic Properties of Two-Dimensional Systems  (EP2DS-16), Hyatt Regency, Albuquerque, New Mexico USA, 2005, Abstract N 49.
• Badalyan S.M., Kim C.S., and Vignale G., Dynamical exchange-correlation effect on the coulomb drag in coupled two-dimensional systems, The 9th APCTP Winter Workshop on Strongly Correlated Electron Systems, Asia Pacific Center for Theoretical Physics, Pohang, Korea, 2005, Poster No: Thu-6.
• F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan. Interface impact on 1/f noise formation and hydrogen gas noise recognition. International Scientific Journal for Alternative Energy and Ecology, N 6, p. 28, 2006.
• F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan. Influence of hydrogen on crystalline silicon surface conditions in view of 1/f noise reduction. International Scientific Journal for Alternative Energy and Ecology, N 7, p. 21, 2006.
• F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan. Semiconductor-contacting media heterointerface as a low-frequency noise level regulator. Intern. Conf. New Tech­no­logies for Develop­ment of Heterosemi­con­ductors for Device Applications, September 21-23, Yerevan Armenia, pp. 56-57, 2006.

Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, 2006

• A. I. Vahanyan. The determination of spreading parameter in multi-valley semiconductors. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 7-10, 2007.
• A. I. Vahanyan, E. M. Baghiyan, V. K. Abrahamyan, H. G. Demirkhanyan, A. H. Yepremyan. Thermoelectric properties of solid solution Pb0.85Ge0.15Te Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 11-14, 2007.
• H. Margaryan, V. Babajanyan, N. Hakobyan, D. Harutyunyan. Some peculiarities of photoreferaction in nematic liquid crystals with a silicon substrate. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 23-26, 2007.
• H. Margaryan, N. Hakobyan, V. Harutyunyan, V. Abrahamyan. Some electro-optical characteristics of semiconductor - liquid crystal interface. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 27-29, 2007.
• A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan. Double-layer semiconductor gas-sensor advanced technology. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 89-92, 2007.
• V. Aralelyan, G. Shahnazaryan, E. Khachaturyan, G. Stepanyan. Manufacture and invegastigations of anodized titanium oxide photoanodes. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 93-96, 2007.
• A. S. Hovhannisyan, Kh. S. Martirosyan, V. M. Aroutiounian, P. G. Soukiassian. Double-layer diamond-like carbon antireflection coatings for GaAs solar cells. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 97-99, 2007.
• V. Aralelyan, V. Galstyan, G. Shahnazaryan. Investigations of gas-sensitive nanosize ZnO<Al> films. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 115-118, 2007.
• V. E. Galstyan. Preparation of ZnO<Al> nano-size layers by magnetron sputtering. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 119-122, 2007.
• V.A. Gevorkyan, K. M. Gambaryan, M. S. Kazaryan. Growth and investigation of indium arsenide-based diode heterostructures form mid-infrared application. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 123-126, 2007.
• A. P. Hakhoyan, S. V. Melkonyan. Features of the refractive index of porous silicon with gradient porosity. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 127-130, 2007.
• Z. H. Mkhitaryan, A. A. Shatveryan, F. V. Gasparyan. Noise properties of the structures containing a layer of porous silicon, in air conditions of gas adsorption. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 131-133, 2007.
• Z. H. Mkhitaryan, T. H. Mkrtchyan. Current-voltage characteristics of the structures containing a layer of porous silicon, in air and in conditions of gas adsorption. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 134-137, 2007.
• V.A. Gevorkyan, N. R. Mangasaryan. Calculation of phase equilibrium for liquid phase epitaxy of InAsSbP quaternary alloys on InAs substrate. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 146-149, 2007.
• F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan, C. E. Korman, B. Noaman, A. H. Arakelyan, A. A. Shatvetyan, A. M. Avetisyan. Short outline of silicon MOS-like structures fabrication techniques, CVC and noise measurements. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 153-156, 2007.
• B. O. Semerjyan, E. A. Khachaturyan. Colour iridization and backscattering electron imaging in the study of metal alloy microstructures. Proc. of the Sixth Intern. Conf. “Semiconductor micro- and nanoelectronics”, Tsakhcadzor, Armenia, September 18-20, pp. 184-187, 2007.

Publications in Scientific Journals 2008 (go back)

1. В. М. Арутюнян, Х. С. Мартиросян, А. С. Оганнисян, П. Г. Сукиасян. Применение пористого кремния для двух- и трехслойных антиотражающих покрытий для кремниевых фотовольтаических преобразователей. Известия НАН РА, Физика, т. 43, N 2, с. 111-119, 2008.
2. V. E. Galstyan, Kh. S. Martirosyan, V. M. Aroutiounian, V. M. Arakelyan, A. H. Arakelyan, P. G. Soukiassian. Investigations of hydrogen sensors made of porous silicon. Thin Solid Films 517, pp. 239-241, 2008.
3. A. S. Hovhannisyan, V. M. Aroutiounian, Kh. S. Martirosyan, and V. E. Galstyan. Investigation of glucose sensitivity of porous silicon. Armenian Journal of Physics, v. 1, N 1, pp. 38-42, 2008.
4. A. S. Hovhannisyan, Kh. S. Martirosyan, V. M. Aroutiounian, P. G. Soukiassian. Double-layer diamond-like carbon antireflection coatings for GaAs solar cells. Armenian Journal of Physics, v. 1, N 1, pp. 74-77, 2008.
5. V. M. Aroutiounian, A. Z. Adamyan, Z. N. Adamyan, A. H. Arakelyan. Tin dioxide thin film hydrogen nanosensor. Proc. of SPIE, v. 6943, pp. 69430J-1 – 69430J-12, 2008.
6. V. M. Aroutiounian. Hydrogen, carbon monoxide and smoke sensors. Workshop on Safety Technologies, ISTC-IZFP, Saarbrueken, Germany, p. 26-28, 2008.
7. V. M. Arakelyan, V. E. Galstyan, G. E. Shahnazaryan. Investigations of gas-sensitive nanosize ZnO<Al> films. Armenian Journal of Physics, v. 1, N 2, pp. 138-141, 2008.
8. V. E. Galstyan. Preparation of ZnO<Al> nano-size layers by magnetron sputtering. Armenian Journal of Physics, v. 1, N 2, pp. 142-145, 2008.
9. V. M. Aroutiounian, V. M. Arakelyan, V. Galstyan, K. Martirosyan, P. Soukiassian. Porous silicon near room temperature nanosensor covered by TiO2 or ZnO thin films. Proc. of SPIE, v. 6943, pp. 69430H-1 – 69430H-8, 2008.
10. V. E. Galstyan, V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan. Investigations of hydrogen sensor made of ZnO<Al> thin film. Technical Digest of the 19th MicroMechanics Europe Workshop (MME 2008), Aachen, Germany, September 28-30, pp. 69-72, 2008.
11. V. M. Arakelyan, V. M. Aroutiounian, G. E. Shahnazaryan, E. A. Khachaturyan. Thin film n-titanium oxide photoanodes for photoelectrochemical production of hydrogen. Renewable Energy, v. 33, N 2, pp. 299-303, 2008.
12. V. Arakelyan, G. Shahnazaryan, E. Khachaturyan, G. Stepanyan. Manufacture and invegastigations of anodized titanium oxide photoanodes. Armenian Journal of Physics, v. 1, N 1, pp. 43-46, 2008.
13. V. Aroutiounian, V. Arakelyan, G. Shahnazaryan, E. Khachaturyan, G. Stepanyan. Manufacture and investigation of nanoporous titanium oxide photoelectrodes. Extended Abstracts of 6th Conf. “Porous Semiconductors-Science and Technology”, Sa Coma-Mallorca, Spain, March 10-14, p. 234-235, 2008.
14. B. O. Semerjyan, E. A. Khachaturyan. Colour iridization and backscattering electron imaging in the study of metal alloy microstructures. Armenian Journal of Physics, v. 1, N 2, pp. 183-187, 2008.
15. М. Г. Азарян. Комбинированный прецизионный  движитель для лабораторных зондовых микроскопов.  Нанотехника, 3(15), с.  69-72, 2008. 69-75??
16. М. Г. Азарян, А. А. Лалаян, Р. В. Саркисян, Г. М. Арзуманян, А. В. Белушкин. Реализация виртуального обеспечения обратной связи в лабораторном туннельно-токовом стенде. Международная научно-практическая конф. “Образовательные, научные и инженерные приложения в среде LabVIEW и технологии National Instruments ”, с.  74-78,  2008.
17. М. Г. Азарян, А. А. Лалаян, В. М. Арутюнян, Г. М. Арзуманян, А. В. Белушкин. К созданию зондового микроскопа сверхвысокого оптического разрешения. “Ядерная физика и нанотехнологии”, сборник статей ОИЯИ, Дубна, с. 395, 2008. 395-399??
18. З. О.  Мхитарян, А. А. Шатверян, В. М. Арутюнян, Ф. В. Гаспарян. Шумы в пористых кремниевых структурах в воздухе и в условиях газовой адсорбции. Известия НАН РА, Физика т. 43, N 3, с. 204-210, 2008.
19. V. M. Aroutiounian, Z. H. Mkhitaryan, A. A. Shatveryan, F. V. Gasparyan, M. Zh. Ghulinyan, L. Pavesi, L. B. Kish, C.-G. Granqvist. Noise spectroscopy of gas sensors. IEEE Sensors Journal 8 (6), art. no. 4529165, pp. 786-790, 2008.
20. Z. H. Mkhitaryan, A. A. Shatveryan, F. V. Gasparyan. Noise properties of the structures containing a layer of porous silicon, in air and in conditions of gas adsorption. Armenian Journal of Physics, v. 1, N 1, pp. 104-107, 2008.
21. V. M. Aroutiounian, Z. H. Mkhitaryan, A. A. Shatveryan, F. V. Gasparyan, M. Ghulinyan, L. Pavesi, L. B. Kish, C. G. Granqvist. Noise spectroscopy of porous silicon gas sensor. Proc. of SPIE, v. 6943, pp. 69430G-1 - 69430G-8, 2008.
22. V. M. Aroutiounian, Z. O. Mkhitaryan, A. A. Shatveryan, C. Granqvist. Influence of contacts on noise and current-voltage characteristic of structures with porous silicon layers. Extended Abstracts of 6th Conf. “Porous Semiconductors-Science and Technology”, Sa Coma-Mallorca, Spain, March 10-14, p. 204-205, 2008.
23. В. А. Геворкян, В. М. Арутюнян, К. М. Гамбарян, И. А. Андреев, Л. В. Голубев, Ю. П. Яковлев. InAsSbP/InAs гетероструктуры для термофотовольтаических преобразователей: получение и свойства. Письма в ЖТФ, т. 34, N 2, с. 55-61, 2008.
24. K. M. Gambaryan, V. M. Aroutiounian, T. Boeck, M. Schulze, P. G. Soukiassian. The liquid phase epitaxy of self-assembled InAsSbP-based strain induced islands on InAs substrates and their evolution from pyramids to quantum dots. Armenian Journal of Physics, v. 1, N 1, pp. 28-37, 2008.
25. V. A. Gevorkyan, K. M. Gambaryan, M. S. Kazaryan. Growth and investigation of indium arsenide-based diode heterostructures form mid-infrared application. Armenian Journal of Physics, v. 1, N 1, pp. 112-117, 2008.
26. K. M. Gambaryan, V. M. Aroutiounian, T. Boeck, M. Schulze and P. Soukiassian. Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate. J. Phys. D: Appl. Phys. 41 (2008) 162004 (5pp).
27. A. I. Vahanyan. Determination of spreading parameter in multi-valley semiconductors. Armenian Journal of Physics, v. 1, N 1, pp. 70-73, 2008.
28. A. I. Vahanyan, E. M. Baghiyan, V. K. Abrahamyan, H. G. Demirkhanyan, A. H. Yepremyan. Thermoelectric properties of Pb0.85Ge0.15Te solid solution. Armenian Journal of Physics, v. 1, N 2, pp. 123-127, 2008.
29. S. V. Melkonyan. On the low-frequency limit of the Schönfeld pulse 1/f-law. Physica B, v. 403, N 12, pp. 2029-2035, 2008.
30. F. V. Gasparyan. UV p-i-n photodiodes made on wide bandgap semiconductors. Modern Physics Letters B, v. 22, N 5, pp. 369-381, 2008.
31. F. V. Gasparyan, S. V. Melkonyan, H. V. Asriyan, C. E. Korman, B. Noaman, A. H. Arakelyan, A. A. Shatvetyan, A. M. Avetisyan. Short outline of silicon MOS-like structures fabrication techniques, CVC and noise measurements. Armenian Journal of Physics, v. 1, N 1, pp. 118-122, 2008.
32. A. P. Hakhoyan, S. V. Melkonyan. Features of the refractive index of porous silicon with gradient porosity. Armenian Journal of Physics, v. 1, N 2, pp. 146-150, 2008.
33. V. V. Buniatyan, V. M. Aroutiounian, G. M. Travajyan. MOS synthetic inductance for RF integrated applications. Proc. of 17th Inter. Scientific&Applied Science Conf. Electronics ET 2008, September 24-26, Sofia, Book. 3, pp. 15-21, 2008.
34. V. V. Buniatyan, V. M. Aroutiounian, A. G. Hakobyan. Characteristics of optically controlled filters on the base of HTSC. Proc. Opto&IR2 Conf. 2008, 6-8 May, Nürnberg, Germany, pp. 303-308, 2008.
35. В. В. Буниатян, В. М. Арутюнян, А. А. Тамразян. Новая модель порогового напряжения короткоканального  SiC MOП транзистора с глубокими примесями и уровнями захвата. Сб. трудов  международн. конф. МЭС-08, Москва, с. 225-230, 2008.
36. Aroutiounian V.M., Arakelyan V.M., Galstyan V.E., Martirosyan Kh.S., Soukiassian P.G., Manufacture and investigation of hydrogen sensitive TiO2-x or ZnO<Al> film-porous silicon devices, Armenian Journal of Physics, v. 1, N 3, Armenia, 2008, p. 219-226.
37. Galstyan V.E., Aroutiounian V.M., Arakelyan V.M., Shahnazaryan G.E., Investigation of hydrogen sensor made of ZnO<Al> thin film, Armenian Journal of Physics, v. 1, N 4, Armenia, 2008, p. 242-246.
38. Gambaryan K.M., Overview of InAs-based III-V compound and Si/Ge semiconductor epitaxial strain-induced islands and quantum dots grown by liquid phase epitaxy. Armenian Journal of Physics, v. 1, N 4, Armenia, 2008, p. 247-267.
39. Gambaryan K.M., Aroutiounian V.M., Simonian A.K., Boeck T., Shape transition of strain-induced InAsSbP islands at liquid-phase epitaxy on inas (100) substrate: from pyramid to semiglobe, Armenian Journal of Physics, v. 1, N 3, Armenia, 2008, p. 208-218.
40. Hakhoyan A.P., Melkonyan S.V., Features of the refractive index of porous silicon with gradient porosity, Armenian Journal of Physics, v. 1, N 2, Armenia, 2008, p. 146-150.
41. Margaryan H.L., Aroutiounian V.M., Babajanyan V.G., Hakobyan N.H., Harutyunyan V.H., Abrahamyan V.K., Investigation of Transient Processes in Nematic Liquid Crystal Cells with Semiconductor Substrate, Caused by the Electric Field Applied to Semiconductor, Molecular Crystals and Liquid Crystals, v. 488, France, 2008, p. 231-237.
42. Margaryan H.L., Babajanyan V.G., Hakobyan N.H., Harutyunyan D. Some peculiarities of photorefraction in nematic liquid crystals with a silicon substrate. Armenian Journal of Physics, v. 1, N 1, Armenia, 2008, p. 108-111.
43. Margaryan H.L., Hakobyan N.H., Harutyunyan V.H., Abrahamyan V.K., Some electro-optical characteristics of semiconductor - liquid crystal interface. Armenian Journal of Physics, v. 1, N 1, Armenia, 2008, p. 87-90.
44. Mkhitaryan Z.H., Influence of hydrogen adsorbtion on current-voltage and noise characteristics of samples with porous silicon layers, International Scientific Journal for Alternative Energy and Ecology, N7(63), Russia, 2008, p. 15-19.
45. Vahanyan A.I., Aroutiounian V.M., Baghiyan E.M., Abrahamyan V.K., Yepremyan A.H., On thermoelectric figure-of-merit of Pb0.78Sn0.22Te<Ge> solid solution, Journal of Alloys and Compounds, v. 463, Amsterdam, 2008, p. 480-483.
46. Vahanyan A.I., Baghiyan E.M., Abrahamyan V.K., Demirkhanyan H.G., Yepremyan A.H., Thermoelectric properties of Pb0.85Ge0.15Te solid solution, Armenian Journal of Physics, v. 1, N 2, Armenia, 2008, p. 123-127.
47. Badalyan S.M., Kim C.S., Vignale G., Exchange and correlation effects on spin Coulomb drag in a quasi-two-dimensional electron system, Physica E, v. 40, 2008, p. 1590-1593.
48. Badalyan S.M., Vignale G., Kim C.S., Finite width and local field corrections to spin Coulomb drag in a quasi-two-dimensional electron gas, Phys. Rev. Lett., v. 100, 2008, p. 016603-1-016603-4.
49. Badalyan S.M., Matos-Abiague A., Vignale G., Fabian J., Anisotropy of plasmon spectrum due to joint Rashba and Dresselhaus spin-orbit interaction, 15th International Winterschool on New Developments in Solid State Physics "Mauterndorf 2008",  Bad Hofgastein, Austria, 2008, p. 150.
50. Badalyan S.M., Matos-Abiague A., Vignale G., Fabian J., Anisotropy of plasmon spectrum due to joint Rashba and Dresselhaus spin-orbit interaction, March Meeting 2008, New Orleans, USA, 2008, p. 259.
51. Badalyan S.M., Matos-Abiague A., Vignale G., Fabian J., Spin-orbit interaction induced anisotropy of the plasmon spectrum, DFG Meeting, Berlin, Germany, 2008, p. 381.
52. Badalyan S.M., Matos-Abiague A., Vignale G., Fabian J., Spin-orbit interaction induced anisotropy of the plasmon spectrum, Nanoelectronic days 2008, Aachen, Germany, 2008, p. 31.
53. Badalyan S.M., Vignale G., Kim C.S., Many-body local field corrections to spin Coulomb drag in a quasi-two-dimensional electron system, 15th International Winterschool on New Developments in Solid State Physics "Mauterndorf 2008", Bad Hofgastein, Austria, 2008, p. 152.
54. Badalyan S.M., Vignale G., Kim C.S., Many-body local field corrections to spin Coulomb drag in a quasi-two-dimensional electron system, March Meeting 2008, New Orleans, USA, 2008, p. 450.
55. Badalyan S.M., Vignale G., Kim C.S., Spin Coulomb drag in a quasi-two-dimensional electron system beyond RPA, DFG Meeting, Berlin, Germany, 2008, p. 382.
56. S. M. Badalyan, C. S. Kim, and G. Vignale. . Spin Coulomb Drag. Intern. Workshop “Quantum Phases and Excitations in Quantum Hall Systems”, Dresden, Germany, June 16-21, 2008; S. M. Badalyan. 22nd General Conf. of the Condensed Matter Division of the European Physical Society,Rome, Italy,August 24-29, 2008.
57. S. M. Badalyan, G. Vignale, and C. S. Kim. Many-body local field corrections to spin Coulomb drag in a quasi-two-dimensional electron system. 15th Intern. Winterschool on New Developments in Solid State Physics "Mauterndorf 2008", Bad Hofgastein, Austria, 18 - 22 February, p. 152, 2008; March Meeting 2008, New Orleans, USA, p. 450, 2008.
58. K. M. Gambaryan. The technological methods for semiconductors epitaxial films growth. Yerevan, 2008, 45 p.p., (Course/Manual).
59. ´áõÝdzÃÛ³Ý ì.ì., гñáõÃÛáõÝÛ³Ý ì.Ø., ¶»ñµ³ñÓñ ѳ׳˳ϳݳÛÇÝ ÏÇë³Ñ³Õáñ¹ã³ÛÇÝ ¿É»ÏïñáÝÇϳÛÇ ÑÇÙáõÝùÝ»ñ, ºäÐ Ññ³ï., ºñ»í³Ý, 2008, 286 ¿ç.
60. Ø»ÉÇùÛ³Ý ì.Þ., ØáíëÇëÛ³Ý ì.Ø., ´á½áÛ³Ý Þ.º., Ø»ÉùáÝÛ³Ý ê.ì., ØÇݳëÛ³Ý ².Î. ¨ ³ÛÉÝ, ØÇÏñá¿É»ÏïñáÝÇϳÛÇ Ð³Û³ëï³ÝÇ ûÉÇÙådz¹³Ý»ñÇ Ã»ëï³ÛÇÝ Ñ³ñó»ñÇ ¨ ËݹÇñÝ»ñÇ ßï»Ù³ñ³Ý, ºÖäÐ Ññ³ï., ºñ»í³Ý, 2008, 162 ¿ç.

Publications in Scientific Journals 2009 (go back)

1. V. Aroutiounian, V. Arakelyan, V. Galstyan, Kh. Martirosyan, and P. Soukiassian. Hydrogen sensor made of porous silicon and covered by TiO2-x or ZnO<Al> thin film. IEEE Sensors Journal, v. 9, N 1, pp. 9-12, 2009.
2. Z. Mkhitaryan, F. Gasparyan, A. Surmalyan. Low frequency noises of hydrogen sensors. Sensors & Transducers Journal, v. 104, N 5, pp. 58-67, 2009.
3. K. Gambaryan, V. Aroutiounian, T. Boeck, M. Schulze. The growth of InAsSbP-based diode heterostructures with quantum dots as a new material for thermophotovoltaic application. Phys. Status Solidi C, v. 6, N 6, pp. 1456-1459, 2009.
4. V. Aroutiounian, V. Arakelyan, G. Shahnazaryan, E. Khachaturyan, G. Stepanyan. Manufacture and investigation of nanoporous titanium oxide photoelectrodes. Phys. Status Solidi C, v. 6, N 7, pp. 1782-1785, 2009.
5. V. M. Aroutiounian. Investigations in the field of solar cells at Yerevan State University. Armenian Journal of Physics, v. 2, N 3, pp. 237-251, 2009.
6. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, K.D. Schierbaum, S-D. Han. Improvement and stabilization of thin-film hydrogen sensors parameters. Armenian Journal of Physics, v. 2, N 3, pp. 200-212, 2009.
7. В. К. Абрамян, Н. Г. Акопян, В. М. Арутюнян, В. Г. Бабаджанян, А. Л. Маргарян, Д. Л. Оганесян, А. Т. Погосян, Д. К. Похсрарян. Исследование характеристик жидкокристаллических электрически-управляемых фазовых пластинок. Известия НАН Армении, т. 44, N 2, с. 124-132, 2009.
8. V. Aroutiounian, Z. Mkhitaryan, A. Adamian, C.-G. Granqvist, L. Kish. Fluctuation-enhanced gas sensing. Procedia Chemistry 1, pp. 216-219, 2009.
9. N. A. Shurpo, S. V. Serov, A. V. Shmidt, H. L. Margaryan, N. V. Kamanina.  Features of fullerenes and carbon nanotubes for nonlinear optics and display application. Diamond & Related Materials, v. 18, pp. 931-934, 2009.
10. В. К. Абрамян, Н. Г. Акопян, В. М. Арутюнян, Н. В. Каманина, А. Л. Маргарян, Д. Л. Оганесян, Д. К. Похсрарян. Bлияние  дополнительного электрического поля на двулучепреломление нематического жидкого кристалла, Известия НАН PА, Физика т. 44, N 6, с. 433-443, 2009.
11. A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian.  Study of sensitivity and response kinetics changes for SnO2 thin-film hydrogen sensors. International Journal of Hydrogen Energy, v. 34, N 19, pp. 8438-8443, 2009.
12. М. Г. Азарян. Задача вертикального позиционирования в лабораторном зондовом микроскопе. Известия НАН РА и ГИУА, сер. Технические науки, т. 62, N 3,с. 54-60, 2009.
13. М. Г. Азарян. Реализация микроскопирования в лабораторном туннельно-токовом стенде. Известия НАН РА и ГИУА сер. Технические науки,  т.62, N 4, с. 72-82, 2009.
14. М. Г. Азарян. О зондовой микроскопии популярно. Կրթությունը և գիտությունը  Արցախում,  N 4, c. 3-4, 2009.
15. V. Aroutiounian. Investigation in Yerevan State University (Possible Applications in Space). ISTC Workshop “Perspective Materials, devices and structures for space applications”, Yerevan, Armenia, 26-28 May, pp. 46-48, 2009.
16. V. Aroutiounian. Nanotechnology – Present Status and Future Prospects in Armenia. International Workshop on “Nanotechnology - Present Status and Future Prospects in Developing Countries”, Kashan, Iran, 18-20 May, 2009.
17. A. V. Surmalyan and F. V. Gasparyan. Surface potential behavior in ISFET-based bio-(chemical) sensors with two insulator layers in dark and under intensity-modulated irradiation. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 67-70, 2009.
18. A. Z. Adamyan and Z. N. Adamyan. Study of specific ageing effect on the performance of thin-film H2 sensors. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 75-79, 2009.
19. Z. O. Mkhitaryan, A. A. Durgaryan, and M. R. Mikaelyan. Temperature dependences of current-voltage characteristics in structures with porous silicon layer under influence of hydrogen adsorption. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 79-81, 2009.
20.  Kh. S. Martirosyan, V. E. Galstyan, and A. S. Hovhannisyan. Investigation of glucose sensitivity of porous silicon. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 83-85, 2009.
21. F. V. Gasparyan, Z. H. Mkhitaryan, and A. V. Surmalyan. Basis structure of (bio-) chemical sensors: comparative analysis of CVC and noises. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 101-104, 2009.
22. V. G. Paremuzyan and V. M. Aroutiounian. Influence of reduction in heat of gas adsorption on noise in gas sensors. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 109-111, 2009.
23. V. K. Abrahamyan, N. H. Hakobyan; H. L. Margaryan, M. V. Isaev, N. L. Ivanova, N. A. Feoktistov. Recording of dynamic diffraction gratings in spatial light modulators of semiconductor-liquid crystal structure. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, 3-5 July, p. 116-119, 2009
24. V. M. Aroutiounian, K. M. Gambaryan, N. G. Alaverdyan, and A. K. Simonyan. Nucleation mechanism of strain-induced InAsSbP quantum dots and pits at liquid phase epitaxy on InAs (100) substrate. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 164-167, 2009.
25. V. M. Aroutiounian, A. Z. Adamyan, E. A. Khachaturyan, K. M. Gambaryan, Z. N. Adamyan, and V. M. Arakelyan. Development of program-controlled titania nanotube array formation technique. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 168-171, 2009.
26. K. M. Gambaryan. Cooperative nucleation of strain-induced InAsSbP quantum dots and pits on InAs (100) substrate by liquid phase epitaxy. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 176-179, 2009.
27. H. G. Demirkhanyan, V. K. Abrahamyan, E. M. Baghiyan, and A. I. Vahanyan. Electrophysical properties of BixSb2-xTe3 (x=0.5) solid solution. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 199-201, 2009.
28. V. M. Arakelyan, G. E. Shahnazaryan, E. A. Khachaturyan, and G. M. Stepanyan. Anodic nanoporous titanium oxide photoanodes. Proc. of the 7th Intern. Conf. “Semiconductor Micro- and Nanoelectronics”, Tsakhcadzor, Armenia, July 3-5, pp. 202-205, 2009.
29. K. Gambaryan, V. Aroutiounian, T.Boeck, M. Schulze. The growth of InAs-based diode heterostructures with quantum dots as a new material for thermophotovoltaic application. Proc. World Renewable Energy Congress (WREC X), Glasgow, Scotland, UK, 21-25 July, pp. 1223-1228, 2009.
30. Z. H. Mkhitaryan, F. V. Gasparyan, A. Surmalyan Low frequency noises of hydrogen sensors on the base of silicon having nano-pores layer. Proc. 20th Intern. Conf. on Noise and Fluctuations, ICNF 2009, Piza, Italy, 14-19 June, pp. 137-140, 2009.
31. F. V. Gasparyan, A. Poghossian, S. A. Vitusevich, M. V. Petrychuk, V. A. Sydoruk, A. V. Surmalyan, J. R. Siqueira Jr., O. N. Oliveira Jr., A. Offenhäusser, M. J. Schöning. 1/f-noise in EIS bio-sensors functionalized with 3 layer-by-layer PAMAM/single walled carbon nanotubes.Proc. 20th Intern. Conf. on Noise and Fluctuations, ICNF 2009, Piza, Italy, 14-19 June, pp. 133-136, 2009.
32. Z. H. Mkhitaryan, V. M. Aroutiounian, A. A. Durgaryan. Influence of hydrogen adsorption on low-frequency noise and CV characteristics of porous silicon structures. Abstracts, KSCS 2009, 5th Kurt Schwabe Symposium. From Corrosion to Semiconductors, Erlangen, 24-28 May, p. 22, 2009.
33. H. L. Margaryan, V. M. Aroutiounian, D. L. Hovhannisyan, V. K. Abrahamyan, N. H.  Hakobyan, D. K. Pokhsraryan. Investigation of the influence of voltage, applied to the semiconductor substrate of liquid crystal cells on birefringence. 10th European Conference on Liquid Crystal ECLC’09, Colmar, France, 19-25 April, PO-16, 2009.
34. P. G. Soukiassian, K. M. Gambaryan, M. Silly, H. Enriquez, F. Charra, T. Boeck, M. Schulze, V. M. Aroutiounian. Strain-induced quantum wires and quantum dots formation at compound semiconductors surface. Book of Abstracts of 12th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience and Applications with Biology (ICFSI-12), Weimar, Germany, 5-12 July, p. 112, 2009.
35. V. Aroutiounian. On commercialization of gas and smoke nanosensors as well as e-nose device using them, antireflection coatings for silicon solar cells, and thermal photovoltaic cells. COMS2009, Copenhagen, August 30 - September 04, 4 pp., 2009.
36. P. Soukiassian, H. Enriquez, K. M. Gambaryan, V. Derycke, M. D’angelo, M. Silly, T. Boeck, M. Schulze, T. Schuelli, G. Renaud and V. M. Aroutiounian. Self-organized nano-objects at 3C-SiC and InAs compound semiconductor (100) surfaces. Abstracts of the 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10), Grenada, Spain, 19-25 September, 2009.
37. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, E. A. Khachaturyan, G. M. Stepanyan. Investigation of nanoporous TiO2 photoanodes with the large area. Theses, The 4th Intern. Renewable and Clean Energy Conf., Yerevan, October 5-7, p. 39, 2009.
38. K. M. Gambaryan, V. M. Aroutiounian. Interaction and cooperative nucleation of InAsSbP quantum dots and pits on InAs (100) substrate. Abstracts, Collaborating Conference on Interacting Nanostructures (CCIN09), San Diego, California, USA, 9-13 November, p. 22, 2009.

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