updated April 2010 Name:		Valeri Arakelyan
	Title:		Executive Director of Center of Semiconductor Devices & Nanotechnologies, Yerevan State University, Armenia Candidate of Phys.-Math. Sci.
	Telephone/Fax:		+374 10 612865
	E-mail:		avaleri@ysu.am
Graduated:		Dept. of Physics, Yerevan State University, Physics of semiconductors, 1969
Candidate:		Institute of Radiophysics and Electronics SA Arm. SSR, Physics of semiconductors and dielectrics, 1982 Synthesis and investigations of the semiconductor phases on titanium dioxide based for photoelectrochemical conversion of solar energy
Main Research Interests:		Physics and photoelectrochemistry of semiconductors and semiconductor devices, solar cells, physical properties of the new semiconductor materials and compositions, nanoelectronics
Subsidiary Research Interests:		Chemical sensors
Honors , Awards		Prize 2006 of President of Armenia
Research Experience:		Governmental grant of Ministry of Science and Education of Armenia ISTC grant A-1232
Main Publications (overall number-100, international publications-49): 1. V. M. Harutyunyan, A. G. Sarkissyan, Gh. R. Panossyan, V. M. Arakelyan, A. O. Arakelyan, G. E. Shahnazaryan, Photoelectrolysis of water with photoelectrode based on titanium dioxide, Russian Journal of Electrochemistry, v. 17, N10, pp. 1471-1476 (1981). 2. A. G. Sarkisyan, E. V. Putnyn, V. M. Arakelyan, V. M. Aroutiounian, K. H. Begoyan, Photoelectrochemical characteristics of photocathodes made of high-temperature superconducting ceramics, Solar Energy Materials and Solar Cells, v. 28, N3, pp. 217-221 (1992). 3. V. M. Aroutiounian, V. M. Arakelyan, A. G. Sarkissyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, Photoelectrochemical characteristics of Fe2O3 photoelectrodes doped with elements of forth group, Russian Journal of Electrochemistry, v. 35, N8, pp. 963-968 (1999). 4. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, S. S. Kocha, Investigations of the Fe1.99Ti0.01O3-electrolyte interface, Electrochimica Acta, v. 45, pp. 1999-2005 (2000). 5. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, O. Khaselev, Investigation of ceramic Fe2O3<Ta> photoelectrodes for solar energy photoelectrochemical conversion, International Journal of Hydrogen Energy, v. 27, pp. 33-38 (2002). 6. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, J. A. Turner, O. Khaselev, Investigations of ceramic photoelectrodes from Fe2O3 doped with niobium, Advances in Science and Technology, v. 33, part D, pp. 425-434 (2003). 7. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, Investigations of the metal-oxide semiconductors promising for photoelectrochemical conversion of solar energy, Solar Energy Materials and Solar Cells, v. 89, N2-3, pp. 153-163 (2005). 8. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, Metal oxide photoelectrodes for hydrogen generation using solar radiation-driven water splitting, Solar Energy, v. 78, N5, pp. 581-592 (2005). 9. V. M. Arakelyan, G. E. Shahnazaryan, E. A. Khachaturyan, Photoelectrochemical conversion of solar energy on TiO2 thin films, International Scientific Journal for Alternative Energy and Ecology (ISJAEE), N11(31), pp. 38-41 (2005). 10. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, G. M. Stepanyan, E. A. Khachaturyan, J. A. Turner, Investigations of the structure of the iron oxide semiconductor-electrolyte interface, C. R. Chimie, v. 9, pp. 325-331 (2006).
Recent Publications: 1. V. M. Arakelyan, V. E. Galstyan, Kh. S. Martirosyan, G. E. Shahnazaryan, V. M. Aroutiounian, P.G. Soukiassian, Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure, Physica E 38, pp. 219-221 (2007). 2. V. M. Aroutiounian, V. M. Arakelyan, G. E. Shahnazaryan, H. R. Hovhannisyan, H. Wang, J. A. Turner, Photoelectrochemistry of tin-doped iron oxide electrodes, Solar Energy, v. 81, pp. 1369-1376 (2007). 3. V. M. Arakelyan, Kh. S. Martirosyan, V. E. Galstyan, G. E. Shahnazaryan, V. M. Aroutiounian, Room temperature gas sensor based on porous silicon/metal oxide structure, Phys. Stat. Sol. (c), v. 4, N 6, p9. 2059-2062 (2007). 4. V. E. Galstyan, Kh. S. Martirosyan, V. M. Aroutiounian, V. M. Arakelyan, A. H. Arakelyan, P. G. Soukiassian. Investigations of hydrogen sensors made of porous silicon, Thin Solid Films 517, pp. 239-241 (2008). 5. V. Aroutiounian, V. Arakelyan, V. Galstyan, Kh. Martirosyan, and P. Soukiassian. Hydrogen sensor made of porous silicon and covered by TiO2-x or ZnO<Al> thin film, IEEE Sensors Journal, v. 9, N1, pp. 9-12 (2009).