Name:		Zara Mkhitaryan
	Title:		Candidate of Phys.-Math. Sci.
	Telephone/Fax:		+374 10 520389
	Graduate:		Dept. of technical Cybernetics (Electronics), Yerevan Polytechnical Institute, 1969
Candidate:		Institute of Radiophysics and Electronics, Armenian National Academy of Sciences, 1990 Physics of Semiconductors and Dielectrics
Main Research Interests:		Physics of semiconductors and semiconductor devices, Physics of 1/f noise, G-R noise, Intrared devices based on silicon doped with deep level impurities, Porous silicon, LEDs
Subsidiary Research Interests:		Theory of Defects in solids
Research Experience:		Grant of Ministry of Science and Education of Armenia, ISTC grant A-322, ISTC grant A-1232, Armenian National Academy of Sciences "semiconductors nanoelectronics"
Main Publications: 1. Z.H. Mkhitaryan, A.A. Shatveryan, A.Z. Adamian, Current-voltage and noise characteristics of silicon-porous silicon-electrolyte structures, Semiconductor Microelectronics, Proceedings of The Fourth National Conference, pp. 121-124 (2003). 2. Z.H. Mkhitaryan, A.A. Shatveryan, A.Z. Adamian, V.M. Aroutiounian, Current-voltage characteristics of structures with porous silicon in electrolyte, Proceedings of National Academy of Sciences of Armenia, v. 39, N3, pp. 173-177 (2004). 3. Z.H. Mkhitaryan, A.A. Shatveryan, A.S. Stepanyan, Kh.S. Martirosyan, V.M. Aroutiounian, Current-voltage characteristics and temperature dependences of  current of silicon samples with a layer of porous silicon in electrolyte, Proceedings Of National Academy of Sciences of Armenia, v. 40, N1, pp. 43-48 (2005). 4.  H.V. Asryan, А.А. Shatveryan, V.M. Arutyunyan, F.V. Gasparyan, S.V. Melkonyan, Z.H. Mkhitaryan, G.Ayvazyan, Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points, SPIE Noise and Information in Nanoelectronics, Sensors and Stangards III, v. 5846, pp. 192-199 (2005). 5. A.А. Shatveryan, Z.H. Mkhitaryan, Features of electrocarry in structures with porous silicon in electrolyte, Semiconductor Micro-And Nanoelectronics Proceedings of The fifth Iinternational Conference, pp. 74-77 (2005). 6. Z.H. Mkhitaryan, А.А. Shatveryan, G.A. Egiazaryan, H.V. Asryan, Low-frequency noise in porous silicon, Semiconductor Micro-And Nanoelectronics Proceedings of The fifth International Conference, pp. 32-35 (2005). 7. Z.H. Mkhitaryan, A.A. Shatveryan, V.M. Aroutiounian, M. Ghulinyan, L. Pavesi, Low-frequency noise in structures with porous silicon in different gas media, Porous semiconductors-scince and technology, Extended Abstracts of the 5^th Iint. Conf. Sitges-Barcelona, pp. 254-255 (2006). 8. V.M. Aroutiounian, Z.H. Mkhitaryan, A.A. Shatveryan, M. Ghulinyan, L. Pavesi, C.C. Granquist, Current-voltage and noise characteristics of porous silicon in carbon monooxide and air, Proc. of the 11th International Meeting on Chemical Sensors, Breshia, (2006).
Recent Publications: 1. I-V Characteristics of Structures with Porous Silicon in Electrolyte, Optical Materials 27 (2005), 962-966, Z.H. Mkhitaruan, А.А. Shatveryan, A.Z. Adamyan, V.M. Arutyunyan 2. Noise Spectroscopy of Structures with Porous Silicon Layers Exposed to Different Gases, Eurosensors XX. Goteborg, Sweden, II (2006), 304-305, Z.H. Mkhitaryan, A.A. Shatveryan, V.M. Aroutiounian, M. Ghulinyan, L. Pavesi, C.C. Granquist